Abstract
A three-stage monolithic microwave integrated-circuit (MMIC) low-noise amplifier (LNA) design with superiorly low thermal-sensitivity coefficients in both the small-signal gain and noise figure characteristics is reported. The amplifier is constituted by using the Al-GaAs/GaAs pseudomorphic high electron mobility transistors (pHEMTs). It is suitable for the commercial applications at Ku-band frequencies. Besides, a compact self-biased structure with a single-bias supply was employed to simplify the circuit and improve thermal stability. A noise figure of 2.3 dB with an associated gain of 22 dB is achieved at 16 GHz, and the output power, P1 dB, is 17 dBm. The proposed LNA has demonstrated excellent thermal stability. The thermal-sensitivity coefficients for the smalt-signal gain and the noise figure are superiorly as low as 0.023 and 0.003 dB/°C, respectively, with respect to the temperature variation from -15 to 85°C.
| Original language | English |
|---|---|
| Pages (from-to) | 1637-1641 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 49 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2007 Jul 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering