A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template

Chien Yuan Lu, Sheng Po Chang, Shoou Jinn Chang, Ting Jen Hsueh, Cheng Liang Hsu, Yu Zung Chiou, I. Cherng Chen

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.

Original languageEnglish
Article number075005
JournalSemiconductor Science and Technology
Issue number7
Publication statusPublished - 2009 Aug 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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