A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

N. C. Su; S. J. Wang; Albert Chin

doi:10.1149/1.3257607

A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

N. C. Su, S. J. Wang, Albert Chin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (V_T) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μ_sat) of 3.5 cm² /V s, and a good I_on / I_off ratio of 1× 10⁶. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low V_T and the small SS allow device voltage operation below 2 V for low power application.

Original language	English
Pages (from-to)	H8-H11
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	1
DOIs	https://doi.org/10.1149/1.3257607
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.",

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AU - Su, N. C.

AU - Wang, S. J.

AU - Chin, Albert

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N2 - This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

AB - This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

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A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

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