A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

N. C. Su, Shui-Jinn Wang, Albert Chin

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number1
DOIs
Publication statusPublished - 2009 Nov 26

Fingerprint

Hafnium
Lanthanum oxides
lanthanum oxides
hafnium oxides
Gate dielectrics
Thin film transistors
transistors
Electric potential
electric potential
thin films
low voltage
Crystallization
Threshold voltage
threshold voltage
Ions
crystallization
lanthanum oxide
ions

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{30b66e12856143ff86e1ec7fa9541bd2,
title = "A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric",
abstract = "This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.",
author = "Su, {N. C.} and Shui-Jinn Wang and Albert Chin",
year = "2009",
month = "11",
day = "26",
doi = "10.1149/1.3257607",
language = "English",
volume = "13",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric. / Su, N. C.; Wang, Shui-Jinn; Chin, Albert.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 1, 26.11.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

AU - Su, N. C.

AU - Wang, Shui-Jinn

AU - Chin, Albert

PY - 2009/11/26

Y1 - 2009/11/26

N2 - This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

AB - This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

UR - http://www.scopus.com/inward/record.url?scp=70450213251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450213251&partnerID=8YFLogxK

U2 - 10.1149/1.3257607

DO - 10.1149/1.3257607

M3 - Article

VL - 13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 1

ER -