A low-power gate driver using depletion-mode a-IGZO TFTs

Chih Lung Lin; Yuan Wei Du; Mao Hsun Cheng; Yuan Chih Chen; Chun Da Tu

doi:10.1002/j.2168-0159.2014.tb00270.x

A low-power gate driver using depletion-mode a-IGZO TFTs

Chih Lung Lin, Yuan Wei Du, Mao Hsun Cheng, Yuan Chih Chen, Chun Da Tu

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.

Original language	English
Pages (from-to)	1039-1042
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	45
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2014.tb00270.x
Publication status	Published - 2014 Jun

All Science Journal Classification (ASJC) codes

General Engineering

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10.1002/j.2168-0159.2014.tb00270.x

Cite this

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title = "A low-power gate driver using depletion-mode a-IGZO TFTs",

abstract = "A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.",

author = "Lin, {Chih Lung} and Du, {Yuan Wei} and Cheng, {Mao Hsun} and Chen, {Yuan Chih} and Tu, {Chun Da}",

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T1 - A low-power gate driver using depletion-mode a-IGZO TFTs

AU - Lin, Chih Lung

AU - Du, Yuan Wei

AU - Cheng, Mao Hsun

AU - Chen, Yuan Chih

AU - Tu, Chun Da

PY - 2014/6

Y1 - 2014/6

N2 - A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.

AB - A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.

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JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

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ER -

A low-power gate driver using depletion-mode a-IGZO TFTs

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