A low-power gate driver using depletion-mode a-IGZO TFTs

Chih Lung Lin, Yuan Wei Du, Mao Hsun Cheng, Yuan Chih Chen, Chun Da Tu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.

Original languageEnglish
Pages (from-to)1039-1042
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume45
Issue number1
DOIs
Publication statusPublished - 2014 Jun

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Thin film transistors
Electric power utilization
Leakage currents

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lin, Chih Lung ; Du, Yuan Wei ; Cheng, Mao Hsun ; Chen, Yuan Chih ; Tu, Chun Da. / A low-power gate driver using depletion-mode a-IGZO TFTs. In: Digest of Technical Papers - SID International Symposium. 2014 ; Vol. 45, No. 1. pp. 1039-1042.
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A low-power gate driver using depletion-mode a-IGZO TFTs. / Lin, Chih Lung; Du, Yuan Wei; Cheng, Mao Hsun; Chen, Yuan Chih; Tu, Chun Da.

In: Digest of Technical Papers - SID International Symposium, Vol. 45, No. 1, 06.2014, p. 1039-1042.

Research output: Contribution to journalArticle

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AU - Tu, Chun Da

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