Normally-off computing (NoC) is one of promising techniques that benefits microsystems with long sleep time. Because NoC can turn off power to achieve zero power consumption and can activate microsystems instantly. This study proposes a novel resistive random access memory (ReRAM)-based nonvolatile flip-flop (NVFF), fabricated using 90-nm CMOS technology and the ReRAM process of the Industrial Technology Research Institute. The proposed NVFF uses a complementary structure with one-phase store to mitigate limitation on store energy and was verified as the registers in three pipeline stages of a NV multiplier-and-accumulator macro. The proposed ReRAM-based NVFF, compared with the state-of-the-art complementary design, can reduce store energy by 36.4%, restore time by 64.2%, and circuit area by 42.8%. The proposed design was also superior in reducing restoration error (by 9.44%) under hardship condition compared to NVFFs with a single NV device.