A low supply voltage VCO implemented by a single common-source 90 nm CMOS transistor

Jian An Hou, Chieh Pin Chang, Jionguang Su, Tsyr Shyang Liou, Shyh Chyi Wong, Yeong Her Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A novel voltage controlled oscillation (VCO) topology using 90-m CMOS technology is demonstrated. The common-source PMOS single transistor integrated with an inductor leads to negative resistance for the VCO that minimizes the transistor size and decreases the flicker noise sources. To our knowledge, the topology of the core VCO is the most compact configuration ever reported. The fabricated VCO consumes 6.26 mW with a supply voltage of 1 V and has a 1.68 × 1.41 mm2 chip area, including the ESD protection circuit. At 1.77 GHz, PMOS VCO features an output power in the range of -5.2 dBm, and exhibits a phase noise of -94 dBc/Hz at the offset frequency of 300 kHz and - 107 dBc/Hz at 1 MHz.

Original languageEnglish
Pages (from-to)64-66
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number1
DOIs
Publication statusPublished - 2007 Jan

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A low supply voltage VCO implemented by a single common-source 90 nm CMOS transistor'. Together they form a unique fingerprint.

  • Cite this