A low-temperature wafer bonding technique using patternable materials

C. T. Pan; H. Yang; Sheng-Chih Shen; M. C. Chou; H. P. Chou

doi:10.1088/0960-1317/12/5/315

A low-temperature wafer bonding technique using patternable materials

C. T. Pan, H. Yang, Sheng-Chih Shen, M. C. Chou, H. P. Chou

Department of Systems and Naval Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm^-2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

Original language	English
Pages (from-to)	611-615
Number of pages	5
Journal	Journal of Micromechanics and Microengineering
Volume	12
Issue number	5
DOIs	https://doi.org/10.1088/0960-1317/12/5/315
Publication status	Published - 2002 Sept 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0960-1317/12/5/315

Cite this

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AU - Pan, C. T.

AU - Yang, H.

AU - Shen, Sheng-Chih

AU - Chou, M. C.

AU - Chou, H. P.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm-2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

AB - In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm-2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

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A low-temperature wafer bonding technique using patternable materials

Abstract

All Science Journal Classification (ASJC) codes

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