A low-temperature wafer bonding technique using patternable materials

C. T. Pan, H. Yang, Sheng-Chih Shen, M. C. Chou, H. P. Chou

Research output: Contribution to journalArticlepeer-review

126 Citations (Scopus)


In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm-2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

Original languageEnglish
Pages (from-to)611-615
Number of pages5
JournalJournal of Micromechanics and Microengineering
Issue number5
Publication statusPublished - 2002 Sept 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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