TY - GEN
T1 - A low-voltage adaptive switched-current SDM for bio-acquisition microsystems
AU - Cheng, Chin Jen
AU - Lee, Shuenn Yuh
PY - 2006
Y1 - 2006
N2 - An ultra-low voltage and low-power adaptive Switched-Current Sigma-Delta Modulator (SISDM) with a 10-bit dynamic range for bio-microsystem applications is presented. In order to achieve the low-voltage requirement, a novel class-AB switched-current memory cell is adopted to implement the SISDM with the over-sampling ratio (OSR) of 64. In addition, a proposed differential current comparator and a low-voltage 1-bit Switched-current Digit-to-Analog Converter (SIDAC) are used for the design of the SDM. Benefits from the SLSDM using the class AB memory cell are low-power consumption, high linearity, and high dynamic range. For the various applications with different biosignal frequencies, the SISDM could be operated in different operation mode. The overall SDM with core area of 0.05mm2 has been implemented in a TSMC 0.18μm 1P6M standard CMOS process technology. Without voltage booster to raise the gate voltage of switches, post-layout simulation results show that the SISDM has a dynamic range over 60dB and a power consumption of 180μW with an input signal of 1.25kHz sinusoid wave and 5kHz bandwidth under a single 0.8V power supply for ENG signals.
AB - An ultra-low voltage and low-power adaptive Switched-Current Sigma-Delta Modulator (SISDM) with a 10-bit dynamic range for bio-microsystem applications is presented. In order to achieve the low-voltage requirement, a novel class-AB switched-current memory cell is adopted to implement the SISDM with the over-sampling ratio (OSR) of 64. In addition, a proposed differential current comparator and a low-voltage 1-bit Switched-current Digit-to-Analog Converter (SIDAC) are used for the design of the SDM. Benefits from the SLSDM using the class AB memory cell are low-power consumption, high linearity, and high dynamic range. For the various applications with different biosignal frequencies, the SISDM could be operated in different operation mode. The overall SDM with core area of 0.05mm2 has been implemented in a TSMC 0.18μm 1P6M standard CMOS process technology. Without voltage booster to raise the gate voltage of switches, post-layout simulation results show that the SISDM has a dynamic range over 60dB and a power consumption of 180μW with an input signal of 1.25kHz sinusoid wave and 5kHz bandwidth under a single 0.8V power supply for ENG signals.
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M3 - Conference contribution
AN - SCOPUS:34547305787
SN - 0780393902
SN - 9780780393905
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 341
EP - 344
BT - ISCAS 2006
T2 - ISCAS 2006: 2006 IEEE International Symposium on Circuits and Systems
Y2 - 21 May 2006 through 24 May 2006
ER -