A macro model of silicon spiral inductor

C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, G. W. Huang, Y. P. Ho, H. Y. Lee, J. F. Kuan, W. Y. Wen, P. Liou, C. L. Chen, L. Y. Leu, K. A. Wen, C. Y. Chang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


A new automatic parameter extraction method for modeling of silicon spiral inductors is presented. The concepts on self-resonance frequency (fsr) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviors of silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation for commercial silicon radiofrequency (RF) circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without any optimization, also provide a rule to fairly, effectively and physically judge the performance of a spiral inductor.

Original languageEnglish
Pages (from-to)759-767
Number of pages9
JournalSolid-State Electronics
Issue number5
Publication statusPublished - 2002 May

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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