A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing

Yeau-Ren Jeng, Pay Yau Huang

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

Original languageEnglish
Pages (from-to)190-197
Number of pages8
JournalJournal of Tribology
Volume127
Issue number1
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

Chemical mechanical polishing
polishing
machining
Polishing
Abrasives
Wear of materials
abrasives
wafers
Hardness
Particle size
hardness
penetration

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{c5df3e194c3548d198c48145ea26274b,
title = "A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing",
abstract = "Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.",
author = "Yeau-Ren Jeng and Huang, {Pay Yau}",
year = "2005",
month = "1",
day = "1",
doi = "10.1115/1.1828068",
language = "English",
volume = "127",
pages = "190--197",
journal = "Journal of Tribology",
issn = "0742-4787",
publisher = "American Society of Mechanical Engineers(ASME)",
number = "1",

}

A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing. / Jeng, Yeau-Ren; Huang, Pay Yau.

In: Journal of Tribology, Vol. 127, No. 1, 01.01.2005, p. 190-197.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A material removal rate model considering interfacial micro-contact wear behavior for chemical mechanical polishing

AU - Jeng, Yeau-Ren

AU - Huang, Pay Yau

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

AB - Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

UR - http://www.scopus.com/inward/record.url?scp=15044360806&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15044360806&partnerID=8YFLogxK

U2 - 10.1115/1.1828068

DO - 10.1115/1.1828068

M3 - Article

AN - SCOPUS:15044360806

VL - 127

SP - 190

EP - 197

JO - Journal of Tribology

JF - Journal of Tribology

SN - 0742-4787

IS - 1

ER -