A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Dong Hai Huang, Wei-Chou Hsu, Yu Shyan Lin, Jung Han Yeh, Jun Chin Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This study presents a metamorphic heterostructure field-effect transistor with a double δ-doped channel (MDDFET). The coupled δ-doped In 0.5Ga0.5As/δ+/In0.5Ga 0.5As/In0.6Ga0.4As/In0.5Ga 0.5As/δ+/In0.5Ga0.5As channel demonstrates high carrier concentration and high mobility due to the good carrier confinement of the δ-doped design and the coupled wavefunction in the undoped In-rich channel. Experimental results indicate that the MDDFET with the gate dimension of 0.65 × 100 νm2 exhibits a maximum extrinsic transconductance of 320 mS mm-1, a saturated drain current density of 566 mA mm-1 at VGS ≤ 0 V, a cut-off frequency of 45 GHz, a maximum oscillation frequency of 125 GHz and a saturated power of 15.9 dBm at 5.8 GHz. These results demonstrate that this studied device is appropriate for high-frequency and high-power applications.

Original languageEnglish
Article number018
Pages (from-to)784-787
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number7
DOIs
Publication statusPublished - 2007 Jul 1

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Drain current
Cutoff frequency
Transconductance
High electron mobility transistors
Wave functions
Carrier concentration
Current density
field effect transistors
transconductance
cut-off
current density
oscillations

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Huang, Dong Hai ; Hsu, Wei-Chou ; Lin, Yu Shyan ; Yeh, Jung Han ; Huang, Jun Chin. / A metamorphic heterostructure field-effect transistor with a double delta-doped channel. In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 7. pp. 784-787.
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A metamorphic heterostructure field-effect transistor with a double delta-doped channel. / Huang, Dong Hai; Hsu, Wei-Chou; Lin, Yu Shyan; Yeh, Jung Han; Huang, Jun Chin.

In: Semiconductor Science and Technology, Vol. 22, No. 7, 018, 01.07.2007, p. 784-787.

Research output: Contribution to journalArticle

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T1 - A metamorphic heterostructure field-effect transistor with a double delta-doped channel

AU - Huang, Dong Hai

AU - Hsu, Wei-Chou

AU - Lin, Yu Shyan

AU - Yeh, Jung Han

AU - Huang, Jun Chin

PY - 2007/7/1

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AB - This study presents a metamorphic heterostructure field-effect transistor with a double δ-doped channel (MDDFET). The coupled δ-doped In 0.5Ga0.5As/δ+/In0.5Ga 0.5As/In0.6Ga0.4As/In0.5Ga 0.5As/δ+/In0.5Ga0.5As channel demonstrates high carrier concentration and high mobility due to the good carrier confinement of the δ-doped design and the coupled wavefunction in the undoped In-rich channel. Experimental results indicate that the MDDFET with the gate dimension of 0.65 × 100 νm2 exhibits a maximum extrinsic transconductance of 320 mS mm-1, a saturated drain current density of 566 mA mm-1 at VGS ≤ 0 V, a cut-off frequency of 45 GHz, a maximum oscillation frequency of 125 GHz and a saturated power of 15.9 dBm at 5.8 GHz. These results demonstrate that this studied device is appropriate for high-frequency and high-power applications.

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