A method integrating optimal algorithm and FEM on CMOS residual stress

W. C. Chuang, David T.W. Lin, Y. C. Hu, H. L. Lee, C. H. Cheng, P. Z. Chang, N. B. Quyen

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Residual stress in MEMS is of inherent importance in various respects. This study proposes a specific method using ANSYS including the birth and death method and combined with the optimal method (SCGM) to reduce the residual stresses during the CMOS fabrication process. The suitable cooling temperature for decreasing the residual stress is proposed and available. It demonstrates that the suitable parameter on the fabrication can reduce the residual stress in MEMS devices without any extra manufacturing process or external apparatus. The proposed method can expand to simulate the realistic MEMS model effectively.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalJournal of Mechanics
Issue number2
Publication statusPublished - 2014 Apr

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanical Engineering
  • Applied Mathematics


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