A miniature heat-dissipation packaging design for gainp collector-up hbts as high-power amplifiers in cellular phone systems

Hsien Cheng Tseng, Pei Hsuan Lee, Jung Hua Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A heat-dissipation packaging configuration of GalnP collector-up (C-up) heterojunction bipolar transistors (HBTs) has been designed and evaluated systematically. 2-D and 3-D finite-element modeling (FEM) approaches are built up to simulate the actual devices and to analyze the temperature distribution behavior. The results show that the reported configuration can be further reduced by 42%. Therefore, thinning the thermal-via structure constructed in GalnP collector-up HBTs should be useful for miniaturization of high-power amplifier (HPA) designs, and the developed FEM method can be very effective for optimizing HBT-based HPAs in future cellular phone systems.

Original languageEnglish
Title of host publication2008 3rd International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2008
Pages364-366
Number of pages3
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 3rd International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2008 - Taipei, Taiwan
Duration: 2008 Oct 222008 Oct 24

Publication series

Name2008 3rd International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2008

Other

Other2008 3rd International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2008
CountryTaiwan
CityTaipei
Period08-10-2208-10-24

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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