A model for heterostructure-emitter bipolar transistors

K. L. Lew, T. K. Chiang, Yeong-Her Wang, Mau-phon Houng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A theoretical model of the heterostructure-emitter bipolar transistor (HEBT) emphasizing the effects of heterointerface recombination and emitter set-back layer thickness is developed. Further, the bandgap narrowing effect is taken into account. In addition the role of the magnitude of valence band offset and heterointerface recombination velocity is discussed. It is found that set-back layer thickness strongly affects d.c. performance and frequency response. When emitter set-back layer thickness equals the base-emitter junction depletion layer width, the recombination effect in the set-back layer and the diffusion capacitance will be reduced because of minimized carrier storage in the emitter, resulting in an optimum HEBT. It is also found that the heterointerface recombination current can limit the HEBT current gain if the trapping density at the heterointerface is larger than 1 × 1012 cm-2. For an optimum design, the current gain of a HEBT can rise to 1000, which is comparable to the best experimental data reported in the literature. Quite good agreement between our model's predictions and reported experimental results is achieved. The presented model can be applied to InGaP/GaAs and to AlGaAs/GaAs structures.

Original languageEnglish
Pages (from-to)1337-1344
Number of pages8
JournalSolid-State Electronics
Volume41
Issue number9
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Bipolar transistors
bipolar transistors
Heterojunctions
emitters
Valence bands
Frequency response
Energy gap
Capacitance
frequency response
aluminum gallium arsenides
depletion
capacitance
trapping
valence
gallium arsenide
predictions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{6ccb8296235c4b77ace8b2ac7a9d24ec,
title = "A model for heterostructure-emitter bipolar transistors",
abstract = "A theoretical model of the heterostructure-emitter bipolar transistor (HEBT) emphasizing the effects of heterointerface recombination and emitter set-back layer thickness is developed. Further, the bandgap narrowing effect is taken into account. In addition the role of the magnitude of valence band offset and heterointerface recombination velocity is discussed. It is found that set-back layer thickness strongly affects d.c. performance and frequency response. When emitter set-back layer thickness equals the base-emitter junction depletion layer width, the recombination effect in the set-back layer and the diffusion capacitance will be reduced because of minimized carrier storage in the emitter, resulting in an optimum HEBT. It is also found that the heterointerface recombination current can limit the HEBT current gain if the trapping density at the heterointerface is larger than 1 × 1012 cm-2. For an optimum design, the current gain of a HEBT can rise to 1000, which is comparable to the best experimental data reported in the literature. Quite good agreement between our model's predictions and reported experimental results is achieved. The presented model can be applied to InGaP/GaAs and to AlGaAs/GaAs structures.",
author = "Lew, {K. L.} and Chiang, {T. K.} and Yeong-Her Wang and Mau-phon Houng",
year = "1997",
month = "1",
day = "1",
doi = "10.1016/S0038-1101(97)00124-X",
language = "English",
volume = "41",
pages = "1337--1344",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

A model for heterostructure-emitter bipolar transistors. / Lew, K. L.; Chiang, T. K.; Wang, Yeong-Her; Houng, Mau-phon.

In: Solid-State Electronics, Vol. 41, No. 9, 01.01.1997, p. 1337-1344.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A model for heterostructure-emitter bipolar transistors

AU - Lew, K. L.

AU - Chiang, T. K.

AU - Wang, Yeong-Her

AU - Houng, Mau-phon

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A theoretical model of the heterostructure-emitter bipolar transistor (HEBT) emphasizing the effects of heterointerface recombination and emitter set-back layer thickness is developed. Further, the bandgap narrowing effect is taken into account. In addition the role of the magnitude of valence band offset and heterointerface recombination velocity is discussed. It is found that set-back layer thickness strongly affects d.c. performance and frequency response. When emitter set-back layer thickness equals the base-emitter junction depletion layer width, the recombination effect in the set-back layer and the diffusion capacitance will be reduced because of minimized carrier storage in the emitter, resulting in an optimum HEBT. It is also found that the heterointerface recombination current can limit the HEBT current gain if the trapping density at the heterointerface is larger than 1 × 1012 cm-2. For an optimum design, the current gain of a HEBT can rise to 1000, which is comparable to the best experimental data reported in the literature. Quite good agreement between our model's predictions and reported experimental results is achieved. The presented model can be applied to InGaP/GaAs and to AlGaAs/GaAs structures.

AB - A theoretical model of the heterostructure-emitter bipolar transistor (HEBT) emphasizing the effects of heterointerface recombination and emitter set-back layer thickness is developed. Further, the bandgap narrowing effect is taken into account. In addition the role of the magnitude of valence band offset and heterointerface recombination velocity is discussed. It is found that set-back layer thickness strongly affects d.c. performance and frequency response. When emitter set-back layer thickness equals the base-emitter junction depletion layer width, the recombination effect in the set-back layer and the diffusion capacitance will be reduced because of minimized carrier storage in the emitter, resulting in an optimum HEBT. It is also found that the heterointerface recombination current can limit the HEBT current gain if the trapping density at the heterointerface is larger than 1 × 1012 cm-2. For an optimum design, the current gain of a HEBT can rise to 1000, which is comparable to the best experimental data reported in the literature. Quite good agreement between our model's predictions and reported experimental results is achieved. The presented model can be applied to InGaP/GaAs and to AlGaAs/GaAs structures.

UR - http://www.scopus.com/inward/record.url?scp=0031235461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031235461&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(97)00124-X

DO - 10.1016/S0038-1101(97)00124-X

M3 - Article

VL - 41

SP - 1337

EP - 1344

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -