A molecular-rotor device for nonvolatile high-density memory applications

Mei Xue; Sanaz Kabehie; Adam Z. Stieg; Ekaterina Tkatchouk; Diego Benitez; William A. Goddard; Jeffrey I. Zink; Kang L. Wang

doi:10.1109/LED.2010.2052018

A molecular-rotor device for nonvolatile high-density memory applications

Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, William A. Goddard, Jeffrey I. Zink, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 10⁴, a read window of about 2.5 V, and retention performance of greater than 10⁴ s. The analysis of the device IV characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

Original language	English
Article number	5512600
Pages (from-to)	1047-1049
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2052018
Publication status	Published - 2010 Sep

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2052018

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@article{73f3df8afb4c498c9bbf056b1858c998,

title = "A molecular-rotor device for nonvolatile high-density memory applications",

abstract = "A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and retention performance of greater than 104 s. The analysis of the device IV characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.",

author = "Mei Xue and Sanaz Kabehie and Stieg, {Adam Z.} and Ekaterina Tkatchouk and Diego Benitez and Goddard, {William A.} and Zink, {Jeffrey I.} and Wang, {Kang L.}",

note = "Funding Information: Manuscript received May 17, 2010; accepted May 26, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the FCRP-FENA Center. The review of this letter was arranged by Editor T. Wang.",

year = "2010",

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doi = "10.1109/LED.2010.2052018",

language = "English",

volume = "31",

pages = "1047--1049",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A molecular-rotor device for nonvolatile high-density memory applications

AU - Xue, Mei

AU - Kabehie, Sanaz

AU - Stieg, Adam Z.

AU - Tkatchouk, Ekaterina

AU - Benitez, Diego

AU - Goddard, William A.

AU - Zink, Jeffrey I.

AU - Wang, Kang L.

N1 - Funding Information: Manuscript received May 17, 2010; accepted May 26, 2010. Date of publication July 19, 2010; date of current version August 25, 2010. This work was supported by the FCRP-FENA Center. The review of this letter was arranged by Editor T. Wang.

PY - 2010/9

Y1 - 2010/9

N2 - A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and retention performance of greater than 104 s. The analysis of the device IV characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

AB - A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and retention performance of greater than 104 s. The analysis of the device IV characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

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