A multi-gate MOSFET compact model featuring independent-gate operation

Darsen D. Lu; Mohan V. Dunga; Chung Hsun Lin; Ali M. Niknejad; Chenming Hu

doi:10.1109/IEDM.2007.4419001

A multi-gate MOSFET compact model featuring independent-gate operation

Darsen D. Lu, Mohan V. Dunga, Chung Hsun Lin, Ali M. Niknejad, Chenming Hu

Institute of Microelectronics

Research output: Contribution to journal › Conference article › peer-review

30 Citations (Scopus)

Abstract

A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

Original language	English
Article number	4419001
Pages (from-to)	565-568
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.2007.4419001
Publication status	Published - 2007
Event	2007 IEEE International Electron Devices Meeting, IEDM - Washington, DC, United States Duration: 2007 Dec 10 → 2007 Dec 12

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2007.4419001

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abstract = "A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.",

author = "Lu, {Darsen D.} and Dunga, {Mohan V.} and Lin, {Chung Hsun} and Niknejad, {Ali M.} and Chenming Hu",

year = "2007",

doi = "10.1109/IEDM.2007.4419001",

language = "English",

pages = "565--568",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2007 IEEE International Electron Devices Meeting, IEDM ; Conference date: 10-12-2007 Through 12-12-2007",

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AU - Lu, Darsen D.

AU - Dunga, Mohan V.

AU - Lin, Chung Hsun

AU - Niknejad, Ali M.

AU - Hu, Chenming

PY - 2007

Y1 - 2007

N2 - A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

AB - A compact model for multi-gate MOSFETs with two independently-biased gates is presented. The core model is verified against TCAD simulations without the use of any fitting parameters. Real device effects such as short channel effects and body doping effects are captured. The use of the model is demonstrated through two simulation examples: (1) Back-gate dynamic feedback of FinFET SRAM cells and (2) Tuning of device variations through back gate biasing.

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DO - 10.1109/IEDM.2007.4419001

M3 - Conference article

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EP - 568

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

M1 - 4419001

T2 - 2007 IEEE International Electron Devices Meeting, IEDM

Y2 - 10 December 2007 through 12 December 2007

ER -

A multi-gate MOSFET compact model featuring independent-gate operation

Abstract

All Science Journal Classification (ASJC) codes

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