A multiple-negative-differential-resistance switch with double InGaP barriers

Der Feng Guo, Chin Chuan Cheng, Kun Wei Lin, Wen-Chau Liu, Wei Lin

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.

Original languageEnglish
Pages (from-to)4185-4187
Number of pages3
JournalApplied Physics Letters
Issue number27
Publication statusPublished - 1996 Dec 30

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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