A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)