A multiple-negative-differential-resistance switch with double InGaP barriers

Der Feng Guo; Chin Chuan Cheng; Kun Wei Lin; Wen Chau Liu; Wei Lin

doi:10.1063/1.116980

A multiple-negative-differential-resistance switch with double InGaP barriers

Der Feng Guo, Chin Chuan Cheng, Kun Wei Lin, Wen Chau Liu, Wei Lin

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.

Original language	English
Pages (from-to)	4185-4187
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	27
DOIs	https://doi.org/10.1063/1.116980
Publication status	Published - 1996 Dec 30

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.116980

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title = "A multiple-negative-differential-resistance switch with double InGaP barriers",

abstract = "A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.",

author = "Guo, {Der Feng} and Cheng, {Chin Chuan} and Lin, {Kun Wei} and Liu, {Wen Chau} and Wei Lin",

year = "1996",

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AU - Guo, Der Feng

AU - Cheng, Chin Chuan

AU - Lin, Kun Wei

AU - Liu, Wen Chau

AU - Lin, Wei

PY - 1996/12/30

Y1 - 1996/12/30

N2 - A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.

AB - A GaAs-InGaP switch has been fabricated and demonstrated. In this device, double i-InGaP layers are employed to provide the potential barriers for carrier tunneling and hole confinement. As sufficient external voltage is applied to this device, a double S-shaped negative-differential-resistance (NDR) characteristics is obtained resulting from the sequential avalanche multiplications in the high electric field regions. However, because of the poor confinement effect to holes, only a single S-shaped NDR phenomenon is observed at higher temperature. With device parameters appropriately adjusted, this device may show prominent potential for multiple-valued logic applications.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

A multiple-negative-differential-resistance switch with double InGaP barriers

Abstract

All Science Journal Classification (ASJC) codes

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