A narrow-pitched crystalline Si-based building integrated photovoltaics module

Hsuan Jui Chen, Richard S. Horng, Che Ming Chiang, Shin Ku Lee

Research output: Contribution to journalArticlepeer-review


An innovative, narrow-pitched, crystalline Si-based photovoltaic module was developed for use in a building. This paper describes the testing of the photovoltaic module, where the cell-to-cell pitch was decreased to 2 mm to achieve maximum power output in a limited construction area. First, four PV module samples with 1-mm, 2-mm, 3-mm and 4-mm pitches were manufactured to evaluate the yield rate during wire-bonding and the packaging stage, and it was found that the reliability of the PV module with a 2-mm pitch or greater is sufficient to satisfy the qualification for a PV application. Then, a PV module with a 2-mm pitch was selected, where a wind resistance test based on the ASTM E330 standard, visual inspection and the maximum power was determined based on the IEC 61215 standard were performed to demonstrate the applicability of the new PV module in Taiwan's climate, which experiences frequent wind disasters. The experimental results indicated that the maximum deflection under 5400 Pa was approximately 41.1 mm, but deformation damage did not occur. The maximum power determination loss of the test module before and after the wind resistance test was less than 1%. The results from the various experiments show that applying this narrow-pitched PV module in buildings where typhoons are common is feasible.

Original languageEnglish
Pages (from-to)326-331
Number of pages6
JournalAdvanced Science Letters
Issue number1
Publication statusPublished - 2012 Aug 1

All Science Journal Classification (ASJC) codes

  • Computer Science(all)
  • Health(social science)
  • Mathematics(all)
  • Education
  • Environmental Science(all)
  • Engineering(all)
  • Energy(all)


Dive into the research topics of 'A narrow-pitched crystalline Si-based building integrated photovoltaics module'. Together they form a unique fingerprint.

Cite this