A new a-IGZO AMOLED pixel circuit design to improve the OLED luminance degradation in 3D displays

Chih-Lung Lin; Chia Che Hung; Po Chun Lai; Wen Yen Chang

doi:10.1002/j.2168-0159.2013.tb06419.x

A new a-IGZO AMOLED pixel circuit design to improve the OLED luminance degradation in 3D displays

Chih-Lung Lin, Chia Che Hung, Po Chun Lai, Wen Yen Chang

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

This work presents a new pixel circuit using amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) for three-dimensional (3D) active-matrix organic light-emitting diode (AMOLED) displays. Based on the simulation results, the proposed driving scheme successfully compensates for the luminance drop as the OLED degrades.

Original language	English
Pages (from-to)	1107-1109
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/j.2168-0159.2013.tb06419.x
Publication status	Published - 2013 Jan 1

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1002/j.2168-0159.2013.tb06419.x

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abstract = "This work presents a new pixel circuit using amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) for three-dimensional (3D) active-matrix organic light-emitting diode (AMOLED) displays. Based on the simulation results, the proposed driving scheme successfully compensates for the luminance drop as the OLED degrades.",

author = "Chih-Lung Lin and Hung, {Chia Che} and Lai, {Po Chun} and Chang, {Wen Yen}",

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AB - This work presents a new pixel circuit using amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) for three-dimensional (3D) active-matrix organic light-emitting diode (AMOLED) displays. Based on the simulation results, the proposed driving scheme successfully compensates for the luminance drop as the OLED degrades.

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