A new a-IGZO AMOLED pixel circuit design to improve the OLED luminance degradation in 3D displays

Chih-Lung Lin, Chia Che Hung, Po Chun Lai, Wen Yen Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This work presents a new pixel circuit using amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) for three-dimensional (3D) active-matrix organic light-emitting diode (AMOLED) displays. Based on the simulation results, the proposed driving scheme successfully compensates for the luminance drop as the OLED degrades.

Original languageEnglish
Pages (from-to)1107-1109
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume44
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Organic light emitting diodes (OLED)
Luminance
Pixels
Display devices
Degradation
Networks (circuits)
Gallium
Thin film transistors
Zinc oxide
Indium
Oxide films

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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A new a-IGZO AMOLED pixel circuit design to improve the OLED luminance degradation in 3D displays. / Lin, Chih-Lung; Hung, Chia Che; Lai, Po Chun; Chang, Wen Yen.

In: Digest of Technical Papers - SID International Symposium, Vol. 44, No. 1, 01.01.2013, p. 1107-1109.

Research output: Contribution to journalArticle

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