Abstract
A new method is described for determining the channel charge and mobility of a MOS transistor as a function of gate bias from the ac admittance measurements. The admittance of the conduction channel of the MOSFET is derived from a transmission line model. The peaks of the G/ω versus ω curves are used to deduce gate-channel capacitance and mobility. The mobile carrier density and mobility in very thin-oxide MOSFET's can be measured more accurately using this ac method, since a zero lateral field and a uniform mobile charge distribution along the channel is maintained with zero drain-source voltage and interface trap effects are reduced by using high test frequencies. Measured data on the electron mobility versus gate voltage are presented for 90-A gate dielectric MOS transistors.
Original language | English |
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Pages (from-to) | 1299-1304 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 33 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1986 Sept |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering