A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

Chih Hung Yen, Yi Jung Liu, Kuo Hui Yu, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Wen Chau Liu, Nan Yi Huang, Chong Yi Lee

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6 Citations (Scopus)

Abstract

A New AlGaInP Multiple quantum-well light-emitting diode (LED) with a thin carbon-doped GaP contact layer and a transparent conducting indium tin oxide film is fabricated and studied. For comparison, the LEDs with different contact layer structures are also included in this work. Experimental results indicate that the LED with a carbon-doped GaP contact layer exhibits a higher output power of 31.4 mW and a higher external quantum efficiency of 9%. The light-output power, under dc 20-mA operation, of this LED is increased by a factor of 18% as compared with that of conventional LEDs. These results are mainly attributed to the significantly lower series resistance and lower optical absorption effect. Moreover, the new device shows the reduced wavelength shift with 1.7-nm variation between 10 and 200 mA in electroluminescence spectrum.

Original languageEnglish
Pages (from-to)1923-1925
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number23
DOIs
Publication statusPublished - 2008 Nov 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Yen, C. H., Liu, Y. J., Yu, K. H., Chen, T. P., Chen, L. Y., Tsai, T. H., Liu, W. C., Huang, N. Y., & Lee, C. Y. (2008). A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure. IEEE Photonics Technology Letters, 20(23), 1923-1925. https://doi.org/10.1109/LPT.2008.2004881