A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

Chih Hung Yen, Yi Jung Liu, Kuo Hui Yu, Tzu Pin Chen, Li Yang Chen, Tsung Han Tsai, Wen-Chau Liu, Nan Yi Huang, Chong Yi Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A New AlGaInP Multiple quantum-well light-emitting diode (LED) with a thin carbon-doped GaP contact layer and a transparent conducting indium tin oxide film is fabricated and studied. For comparison, the LEDs with different contact layer structures are also included in this work. Experimental results indicate that the LED with a carbon-doped GaP contact layer exhibits a higher output power of 31.4 mW and a higher external quantum efficiency of 9%. The light-output power, under dc 20-mA operation, of this LED is increased by a factor of 18% as compared with that of conventional LEDs. These results are mainly attributed to the significantly lower series resistance and lower optical absorption effect. Moreover, the new device shows the reduced wavelength shift with 1.7-nm variation between 10 and 200 mA in electroluminescence spectrum.

Original languageEnglish
Pages (from-to)1923-1925
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number23
DOIs
Publication statusPublished - 2008 Nov 1

Fingerprint

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
Carbon
quantum wells
carbon
output
Electroluminescence
Tin oxides
Quantum efficiency
electroluminescence
indium oxides
Indium
Light absorption
tin oxides
Oxide films
oxide films
quantum efficiency
optical absorption
conduction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Yen, Chih Hung ; Liu, Yi Jung ; Yu, Kuo Hui ; Chen, Tzu Pin ; Chen, Li Yang ; Tsai, Tsung Han ; Liu, Wen-Chau ; Huang, Nan Yi ; Lee, Chong Yi. / A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure. In: IEEE Photonics Technology Letters. 2008 ; Vol. 20, No. 23. pp. 1923-1925.
@article{e5f5bd3b094c429fb566f32c6ee9fd46,
title = "A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure",
abstract = "A New AlGaInP Multiple quantum-well light-emitting diode (LED) with a thin carbon-doped GaP contact layer and a transparent conducting indium tin oxide film is fabricated and studied. For comparison, the LEDs with different contact layer structures are also included in this work. Experimental results indicate that the LED with a carbon-doped GaP contact layer exhibits a higher output power of 31.4 mW and a higher external quantum efficiency of 9{\%}. The light-output power, under dc 20-mA operation, of this LED is increased by a factor of 18{\%} as compared with that of conventional LEDs. These results are mainly attributed to the significantly lower series resistance and lower optical absorption effect. Moreover, the new device shows the reduced wavelength shift with 1.7-nm variation between 10 and 200 mA in electroluminescence spectrum.",
author = "Yen, {Chih Hung} and Liu, {Yi Jung} and Yu, {Kuo Hui} and Chen, {Tzu Pin} and Chen, {Li Yang} and Tsai, {Tsung Han} and Wen-Chau Liu and Huang, {Nan Yi} and Lee, {Chong Yi}",
year = "2008",
month = "11",
day = "1",
doi = "10.1109/LPT.2008.2004881",
language = "English",
volume = "20",
pages = "1923--1925",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "23",

}

A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure. / Yen, Chih Hung; Liu, Yi Jung; Yu, Kuo Hui; Chen, Tzu Pin; Chen, Li Yang; Tsai, Tsung Han; Liu, Wen-Chau; Huang, Nan Yi; Lee, Chong Yi.

In: IEEE Photonics Technology Letters, Vol. 20, No. 23, 01.11.2008, p. 1923-1925.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A New AlGaInP Multiple-Quantum-Well Light-Emitting Diode With a Thin Carbon-Doped GaP Contact Layer Structure

AU - Yen, Chih Hung

AU - Liu, Yi Jung

AU - Yu, Kuo Hui

AU - Chen, Tzu Pin

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen-Chau

AU - Huang, Nan Yi

AU - Lee, Chong Yi

PY - 2008/11/1

Y1 - 2008/11/1

N2 - A New AlGaInP Multiple quantum-well light-emitting diode (LED) with a thin carbon-doped GaP contact layer and a transparent conducting indium tin oxide film is fabricated and studied. For comparison, the LEDs with different contact layer structures are also included in this work. Experimental results indicate that the LED with a carbon-doped GaP contact layer exhibits a higher output power of 31.4 mW and a higher external quantum efficiency of 9%. The light-output power, under dc 20-mA operation, of this LED is increased by a factor of 18% as compared with that of conventional LEDs. These results are mainly attributed to the significantly lower series resistance and lower optical absorption effect. Moreover, the new device shows the reduced wavelength shift with 1.7-nm variation between 10 and 200 mA in electroluminescence spectrum.

AB - A New AlGaInP Multiple quantum-well light-emitting diode (LED) with a thin carbon-doped GaP contact layer and a transparent conducting indium tin oxide film is fabricated and studied. For comparison, the LEDs with different contact layer structures are also included in this work. Experimental results indicate that the LED with a carbon-doped GaP contact layer exhibits a higher output power of 31.4 mW and a higher external quantum efficiency of 9%. The light-output power, under dc 20-mA operation, of this LED is increased by a factor of 18% as compared with that of conventional LEDs. These results are mainly attributed to the significantly lower series resistance and lower optical absorption effect. Moreover, the new device shows the reduced wavelength shift with 1.7-nm variation between 10 and 200 mA in electroluminescence spectrum.

UR - http://www.scopus.com/inward/record.url?scp=85008047717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008047717&partnerID=8YFLogxK

U2 - 10.1109/LPT.2008.2004881

DO - 10.1109/LPT.2008.2004881

M3 - Article

VL - 20

SP - 1923

EP - 1925

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 23

ER -