A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications

Kong Beng Thei, Chung Long Cheng, Hsin Chien Lin, Tong Sen Chang, Nun Sian Tsai, Kuo Hwa Lee, Hung Ming Chuang, Sheng Fu Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications has been demonstrated and studied. A simple model is proposed to analyze its important parameters such as the voltage-dependent bulk sheet resistance, interface resistance, and voltage coefficient of resistance (VCR). An anomalous voltage-dependent characteristic of overall resistance is found to mainly result from the existence of interface resistance. The proposed structure of a polysilicon resistor with a larger effective width of interface region shows substantial suppression of the voltage-dependent resistance deviation caused by interface resistance. The reduction of the VCR value is also obtained for the new structure. Consequently, from experimental results, the proposed structure can be used in precise (lower VCR) polysilicon resistors.

Original languageEnglish
Pages (from-to)516-518
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume50
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Thei, K. B., Cheng, C. L., Lin, H. C., Chang, T. S., Tsai, N. S., Lee, K. H., Chuang, H. M., Tsai, S. F., & Liu, W-C. (2003). A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications. IEEE Transactions on Electron Devices, 50(2), 516-518. https://doi.org/10.1109/TED.2003.809041