A new and simple means for self-assembled nanostructure: Facilitated by buffer layer

Cheng Liang Hsu, Shang Shian Yang, Yung Kuan Tseng, I. Cherng Chen, Yan Ru Lin, Shoou Jinn Chang, Shinn Tyan Wu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

One-dimensional semiconductor nanomaterials are expected to be important components in future nano-devices. The well-controlled growth of the nanomaterials is the most important aspect of nano-devices production. A new and simple means of growing ZnO nanowire (NW) arrays using a TiN buffer layer, but without using any catalysis or template, was proposed although the crystal structure thus obtained differed entirely from that of ZnO.

Original languageEnglish
Pages (from-to)18799-18803
Number of pages5
JournalJournal of Physical Chemistry B
Volume108
Issue number49
DOIs
Publication statusPublished - 2004 Dec 9

All Science Journal Classification (ASJC) codes

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Materials Chemistry

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    Hsu, C. L., Yang, S. S., Tseng, Y. K., Chen, I. C., Lin, Y. R., Chang, S. J., & Wu, S. T. (2004). A new and simple means for self-assembled nanostructure: Facilitated by buffer layer. Journal of Physical Chemistry B, 108(49), 18799-18803. https://doi.org/10.1021/jp0456382