TY - GEN
T1 - A new compact Horizontal Current Bipolar Transistor (HCBT) fabricated in (110) wafers
AU - Suligoj, T.
AU - Wang, K. L.
AU - Koricic, M.
AU - Bilijanovic, P.
PY - 2002
Y1 - 2002
N2 - A very compact Horizontal Current Bipolar Transistor (HCBT) is fabricated and tested. It is processed in 110 bulk Si substrate where the 111 crystal plane is perpendicular to the surface and is used as the active transistor sidewall. In this way, the sidewall roughness can be minimised by using crystallographic dependent etchants making the intrinsic transistor doping process highly controllable and repeatable. Hence, unlike in the existing lateral bipolar transistors, the optimum dopant distribution can be achieved what will improve transistor's high-frequency performance. Additionally, HCBT is processed in simple technology with only 5 lithography masks making this structure attractive for low-cost, low-power high-performance bipolar/BiCMOS applications. The improvement of fT and fmax up to 24 and 50 GHz, respectively, can be achieved by using HCBT technology.
AB - A very compact Horizontal Current Bipolar Transistor (HCBT) is fabricated and tested. It is processed in 110 bulk Si substrate where the 111 crystal plane is perpendicular to the surface and is used as the active transistor sidewall. In this way, the sidewall roughness can be minimised by using crystallographic dependent etchants making the intrinsic transistor doping process highly controllable and repeatable. Hence, unlike in the existing lateral bipolar transistors, the optimum dopant distribution can be achieved what will improve transistor's high-frequency performance. Additionally, HCBT is processed in simple technology with only 5 lithography masks making this structure attractive for low-cost, low-power high-performance bipolar/BiCMOS applications. The improvement of fT and fmax up to 24 and 50 GHz, respectively, can be achieved by using HCBT technology.
UR - https://www.scopus.com/pages/publications/0043190276
UR - https://www.scopus.com/pages/publications/0043190276#tab=citedBy
U2 - 10.1109/ESSDERC.2002.195004
DO - 10.1109/ESSDERC.2002.195004
M3 - Conference contribution
AN - SCOPUS:0043190276
T3 - European Solid-State Device Research Conference
SP - 607
EP - 610
BT - European Solid-State Device Research Conference
A2 - Gnani, Elena
A2 - Baccarani, Giorgio
A2 - Rudan, Massimo
PB - IEEE Computer Society
T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002
Y2 - 24 September 2002 through 26 September 2002
ER -