A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device

When Chau Liu; Der Feng Guo; Lih Wen Laih; Shiuh Ren Yih; Jing Tong Liang; Gau Ming Lyuu

A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device

When Chau Liu, Der Feng Guo, Lih Wen Laih, Shiuh Ren Yih, Jing Tong Liang, Gau Ming Lyuu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, a new switching device having a p-type delta-oped sheet, ¿(p⁺), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Editors	Peter Ashburn, Chris Hill
Publisher	IEEE Computer Society
Pages	551-554
Number of pages	4
ISBN (Electronic)	2863321579
Publication status	Published - 1994 Jan 1
Event	24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom Duration: 1994 Sep 11 → 1994 Sep 15

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Other

Other	24th European Solid State Device Research Conference, ESSDERC 1994
Country	United Kingdom
City	Edinburgh
Period	94-09-11 → 94-09-15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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Cite this

Liu, W. C., Guo, D. F., Laih, L. W., Yih, S. R., Liang, J. T., & Lyuu, G. M. (1994). A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 551-554). [5435778] (European Solid-State Device Research Conference). IEEE Computer Society.

@inproceedings{7044dec380384ce1a283f98074a9bc8e,

title = "A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device",

abstract = "In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.",

author = "Liu, {When Chau} and Guo, {Der Feng} and Laih, {Lih Wen} and Yih, {Shiuh Ren} and Liang, {Jing Tong} and Lyuu, {Gau Ming}",

year = "1994",

month = jan,

day = "1",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "551--554",

editor = "Peter Ashburn and Chris Hill",

booktitle = "European Solid-State Device Research Conference",

address = "United States",

note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",

}

Liu, WC, Guo, DF, Laih, LW, Yih, SR, Liang, JT & Lyuu, GM 1994, A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device. in P Ashburn & C Hill (eds), European Solid-State Device Research Conference., 5435778, European Solid-State Device Research Conference, IEEE Computer Society, pp. 551-554, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 94-09-11.

A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device. / Liu, When Chau; Guo, Der Feng; Laih, Lih Wen; Yih, Shiuh Ren; Liang, Jing Tong; Lyuu, Gau Ming.

European Solid-State Device Research Conference. ed. / Peter Ashburn; Chris Hill. IEEE Computer Society, 1994. p. 551-554 5435778 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device

AU - Liu, When Chau

AU - Guo, Der Feng

AU - Laih, Lih Wen

AU - Yih, Shiuh Ren

AU - Liang, Jing Tong

AU - Lyuu, Gau Ming

PY - 1994/1/1

Y1 - 1994/1/1

N2 - In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.

AB - In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.

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T3 - European Solid-State Device Research Conference

SP - 551

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BT - European Solid-State Device Research Conference

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PB - IEEE Computer Society

T2 - 24th European Solid State Device Research Conference, ESSDERC 1994

Y2 - 11 September 1994 through 15 September 1994

ER -