A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device

When Chau Liu, Der Feng Guo, Lih Wen Laih, Shiuh Ren Yih, Jing Tong Liang, Gau Ming Lyuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages551-554
Number of pages4
ISBN (Electronic)2863321579
Publication statusPublished - 1994 Jan 1
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: 1994 Sep 111994 Sep 15

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period94-09-1194-09-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Liu, W. C., Guo, D. F., Laih, L. W., Yih, S. R., Liang, J. T., & Lyuu, G. M. (1994). A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 551-554). [5435778] (European Solid-State Device Research Conference). IEEE Computer Society.