A new dielectric material system of xLa(Mg1/2Ti1/2) O3-(1-x) CaTiO3 at microvave frequency

Yuan Bin Chen; Cheng Liang Huang; Che Win Row

doi:10.1557/proc-783-b5.11

A new dielectric material system of xLa(Mg_1/2Ti_1/2) O_3-(1-x) CaTiO₃ at microvave frequency

Yuan Bin Chen, Cheng Liang Huang, Che Win Row

Department of Electrical Engineering

Research output: Contribution to journal › Conference article

Abstract

The dielectric properties and the microstructures of xLa(Mg _1/2Ti_1/2)O₃-(1-x)CaTiO₃ ceramics with B₂O₃ additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B₂O₃ (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg_1/2Ti_1/2)O₃-(1-x)CaTiO ₃ ceramics. It is found that La(Mg_1/2Ti _1/2)O₃-(1-x)CaTiO₃ ceramics can be sintered at 1400°C due to the liquid phase effect of B₂O₃ addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg _1/2Ti_1/2)O₃-0.5CaTiO₃ ceramics with 0.25 wt% B₂O₃ addition possesses a dielectric constant (ε_r) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τ_f) of-8.94 ppm/°C. As an increasing the content of La(Mg_1/2Ti_1/2)O₃, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	783
DOIs	https://doi.org/10.1557/proc-783-b5.11
Publication status	Published - 2003
Event	Materials, Integration and Packaging Issues for High - Frequency Devices - Boston, MA, United States Duration: 2003 Dec 1 → 2003 Dec 3

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-783-b5.11

Fingerprint Dive into the research topics of 'A new dielectric material system of xLa(Mg1/2Ti1/2) O3-(1-x) CaTiO3 at microvave frequency'. Together they form a unique fingerprint.

Cite this

Chen, Y. B., Huang, C. L., & Row, C. W. (2003). A new dielectric material system of xLa(Mg_1/2Ti_1/2) O_3-(1-x) CaTiO₃ at microvave frequency. Materials Research Society Symposium - Proceedings, 783, 41-46. https://doi.org/10.1557/proc-783-b5.11

@article{d1d1d0d528a14b5ab5fa78db16276833,

title = "A new dielectric material system of xLa(Mg1/2Ti1/2) O3-(1-x) CaTiO3 at microvave frequency",

abstract = "The dielectric properties and the microstructures of xLa(Mg 1/2Ti1/2)O3-(1-x)CaTiO3 ceramics with B2O3 additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO 3 ceramics. It is found that La(Mg1/2Ti 1/2)O3-(1-x)CaTiO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg 1/2Ti1/2)O3-0.5CaTiO3 ceramics with 0.25 wt% B2O3 addition possesses a dielectric constant (εr) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τf) of-8.94 ppm/°C. As an increasing the content of La(Mg1/2Ti1/2)O3, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.",

author = "Chen, {Yuan Bin} and Huang, {Cheng Liang} and Row, {Che Win}",

year = "2003",

doi = "10.1557/proc-783-b5.11",

language = "English",

volume = "783",

pages = "41--46",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Materials, Integration and Packaging Issues for High - Frequency Devices ; Conference date: 01-12-2003 Through 03-12-2003",

}

TY - JOUR

T1 - A new dielectric material system of xLa(Mg1/2Ti1/2) O3-(1-x) CaTiO3 at microvave frequency

AU - Chen, Yuan Bin

AU - Huang, Cheng Liang

AU - Row, Che Win

PY - 2003

Y1 - 2003

N2 - The dielectric properties and the microstructures of xLa(Mg 1/2Ti1/2)O3-(1-x)CaTiO3 ceramics with B2O3 additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO 3 ceramics. It is found that La(Mg1/2Ti 1/2)O3-(1-x)CaTiO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg 1/2Ti1/2)O3-0.5CaTiO3 ceramics with 0.25 wt% B2O3 addition possesses a dielectric constant (εr) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τf) of-8.94 ppm/°C. As an increasing the content of La(Mg1/2Ti1/2)O3, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.

AB - The dielectric properties and the microstructures of xLa(Mg 1/2Ti1/2)O3-(1-x)CaTiO3 ceramics with B2O3 additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO 3 ceramics. It is found that La(Mg1/2Ti 1/2)O3-(1-x)CaTiO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg 1/2Ti1/2)O3-0.5CaTiO3 ceramics with 0.25 wt% B2O3 addition possesses a dielectric constant (εr) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τf) of-8.94 ppm/°C. As an increasing the content of La(Mg1/2Ti1/2)O3, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.

UR - http://www.scopus.com/inward/record.url?scp=3042673604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042673604&partnerID=8YFLogxK

U2 - 10.1557/proc-783-b5.11

DO - 10.1557/proc-783-b5.11

M3 - Conference article

AN - SCOPUS:3042673604

VL - 783

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Materials, Integration and Packaging Issues for High - Frequency Devices

Y2 - 1 December 2003 through 3 December 2003

ER -