TY - JOUR
T1 - A new GaAs bipolar transistor with a doping-superlattice collector
AU - Sun, Chung Yih
AU - Liu, Wen Chau
N1 - Funding Information:
Acknowledgements--The authorsa cknowledgDer J. S. Wu and Miss H. R. Sze for their technicaal ssistanceT. his work was sponsoredb y the NationalS cienceC ouncilof the Republico f China undeCr ontractN o. NSC 80-0404-E006-54.
PY - 1992/6
Y1 - 1992/6
N2 - A new bipolar transistor with an n+-GaAs/p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been demonstrated. Owing to the avalanche multiplications within SDS periods or the emitter-base p-n junction depletion region, an S-shaped negative-differential-resistance (NDR) phenomenon is observed both under the normal- and inverted-mode two-terminal operation. The bidirectional switching performances provide significant flexibility on circuit applications. Also, a transistor action with current gain of about 20 is obtained under the normal-mode three-terminal operation. Furthermore, an interesting S-shaped NDR family, controlled by the base current, is achieved at higher current regimes. However, under a distinct three-terminal-controlled operation, i.e. the inverted-mode, various transistor actions and a controllable S-shaped NDR family are performed.
AB - A new bipolar transistor with an n+-GaAs/p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been demonstrated. Owing to the avalanche multiplications within SDS periods or the emitter-base p-n junction depletion region, an S-shaped negative-differential-resistance (NDR) phenomenon is observed both under the normal- and inverted-mode two-terminal operation. The bidirectional switching performances provide significant flexibility on circuit applications. Also, a transistor action with current gain of about 20 is obtained under the normal-mode three-terminal operation. Furthermore, an interesting S-shaped NDR family, controlled by the base current, is achieved at higher current regimes. However, under a distinct three-terminal-controlled operation, i.e. the inverted-mode, various transistor actions and a controllable S-shaped NDR family are performed.
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U2 - 10.1016/0038-1101(92)90275-H
DO - 10.1016/0038-1101(92)90275-H
M3 - Article
AN - SCOPUS:0026880982
SN - 0038-1101
VL - 35
SP - 751
EP - 757
JO - Solid State Electronics
JF - Solid State Electronics
IS - 6
ER -