A new GaAs bipolar transistor with a doping-superlattice collector

Chung Yih Sun, Wen-Chau Liu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new bipolar transistor with an n+-GaAs/p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been demonstrated. Owing to the avalanche multiplications within SDS periods or the emitter-base p-n junction depletion region, an S-shaped negative-differential-resistance (NDR) phenomenon is observed both under the normal- and inverted-mode two-terminal operation. The bidirectional switching performances provide significant flexibility on circuit applications. Also, a transistor action with current gain of about 20 is obtained under the normal-mode three-terminal operation. Furthermore, an interesting S-shaped NDR family, controlled by the base current, is achieved at higher current regimes. However, under a distinct three-terminal-controlled operation, i.e. the inverted-mode, various transistor actions and a controllable S-shaped NDR family are performed.

Original languageEnglish
Pages (from-to)751-757
Number of pages7
JournalSolid State Electronics
Volume35
Issue number6
DOIs
Publication statusPublished - 1992 Jan 1

Fingerprint

Bipolar transistors
bipolar transistors
accumulators
Transistors
Doping (additives)
transistors
p-n junctions
multiplication
avalanches
high current
Networks (circuits)
flexibility
emitters
depletion
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "A new bipolar transistor with an n+-GaAs/p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been demonstrated. Owing to the avalanche multiplications within SDS periods or the emitter-base p-n junction depletion region, an S-shaped negative-differential-resistance (NDR) phenomenon is observed both under the normal- and inverted-mode two-terminal operation. The bidirectional switching performances provide significant flexibility on circuit applications. Also, a transistor action with current gain of about 20 is obtained under the normal-mode three-terminal operation. Furthermore, an interesting S-shaped NDR family, controlled by the base current, is achieved at higher current regimes. However, under a distinct three-terminal-controlled operation, i.e. the inverted-mode, various transistor actions and a controllable S-shaped NDR family are performed.",
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A new GaAs bipolar transistor with a doping-superlattice collector. / Sun, Chung Yih; Liu, Wen-Chau.

In: Solid State Electronics, Vol. 35, No. 6, 01.01.1992, p. 751-757.

Research output: Contribution to journalArticle

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