A new GaAs switching device with double-confinement-collector structure

Wen Chau Liu; Der Feng Guo

doi:10.1016/0038-1101(92)90111-O

A new GaAs switching device with double-confinement-collector structure

Research output: Contribution to journal › Article › peer-review

Abstract

A new GaAs switching device with double-confinement-collector structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. An S-shaped negative-differential-resistance (NDR) phenomenon, resulting from the impact ionization at the GaAs intrinsic layer and the potential redistribution effect, was observed. The influence of temperature variation on the switching parameters, e.g. switching voltage V_S, switching current I_S, holding voltage V_H and holding current I_H, was investigated. From the experimental results, the proposed structure exhibits good potential for microwave and oscillation circuit applications.

Original language	English
Pages (from-to)	501-504
Number of pages	4
Journal	Solid State Electronics
Volume	35
Issue number	4
DOIs	https://doi.org/10.1016/0038-1101(92)90111-O
Publication status	Published - 1992 Apr

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(92)90111-O

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@article{3906b928f3b34d17b8d00a143f724437,

title = "A new GaAs switching device with double-confinement-collector structure",

abstract = "A new GaAs switching device with double-confinement-collector structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. An S-shaped negative-differential-resistance (NDR) phenomenon, resulting from the impact ionization at the GaAs intrinsic layer and the potential redistribution effect, was observed. The influence of temperature variation on the switching parameters, e.g. switching voltage VS, switching current IS, holding voltage VH and holding current IH, was investigated. From the experimental results, the proposed structure exhibits good potential for microwave and oscillation circuit applications.",

author = "Liu, {Wen Chau} and Guo, {Der Feng}",

note = "Funding Information: Acknowledgements--The authors wish to thank Miss H. R. Sze for her technical assistance during the MBE growth. Part of this study was supported by the National Science Council of the Republic of China under Contract No. NSC80-0404-E006-14. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1992",

month = apr,

doi = "10.1016/0038-1101(92)90111-O",

language = "English",

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journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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T1 - A new GaAs switching device with double-confinement-collector structure

AU - Liu, Wen Chau

AU - Guo, Der Feng

N1 - Funding Information: Acknowledgements--The authors wish to thank Miss H. R. Sze for her technical assistance during the MBE growth. Part of this study was supported by the National Science Council of the Republic of China under Contract No. NSC80-0404-E006-14. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1992/4

Y1 - 1992/4

N2 - A new GaAs switching device with double-confinement-collector structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. An S-shaped negative-differential-resistance (NDR) phenomenon, resulting from the impact ionization at the GaAs intrinsic layer and the potential redistribution effect, was observed. The influence of temperature variation on the switching parameters, e.g. switching voltage VS, switching current IS, holding voltage VH and holding current IH, was investigated. From the experimental results, the proposed structure exhibits good potential for microwave and oscillation circuit applications.

AB - A new GaAs switching device with double-confinement-collector structure, prepared by molecular beam epitaxy (MBE), has been fabricated and demonstrated. An S-shaped negative-differential-resistance (NDR) phenomenon, resulting from the impact ionization at the GaAs intrinsic layer and the potential redistribution effect, was observed. The influence of temperature variation on the switching parameters, e.g. switching voltage VS, switching current IS, holding voltage VH and holding current IH, was investigated. From the experimental results, the proposed structure exhibits good potential for microwave and oscillation circuit applications.

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A new GaAs switching device with double-confinement-collector structure

Abstract

All Science Journal Classification (ASJC) codes

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