A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering