A new HCBT with a partially etched collector

Tomislav Suligoj; Petar Biljanović; Johnny K.O. Sin; Kang L. Wang

doi:10.1109/LED.2004.842437

A new HCBT with a partially etched collector

Tomislav Suligoj, Petar Biljanović, Johnny K.O. Sin, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p⁺ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (f_T) of 30.4 GHz, the maximum frequency of oscillations (f_max) of 35 GHz and the collector-emitter breakdown voltage (BV_CEO) of 4.2 V, which are the highest f_T and the highest f_TBV_CEO product among the lateral bipolar transistors (LBTs).

Original language	English
Pages (from-to)	200-202
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2004.842437
Publication status	Published - 2005 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2004.842437

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title = "A new HCBT with a partially etched collector",

abstract = "A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).",

author = "Tomislav Suligoj and Petar Biljanovi{\'c} and Sin, {Johnny K.O.} and Wang, {Kang L.}",

year = "2005",

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AU - Suligoj, Tomislav

AU - Biljanović, Petar

AU - Sin, Johnny K.O.

AU - Wang, Kang L.

PY - 2005/3

Y1 - 2005/3

N2 - A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).

AB - A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).

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DO - 10.1109/LED.2004.842437

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SP - 200

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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A new HCBT with a partially etched collector

Abstract

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