@inproceedings{04ec4f56cce745a38f2586866ba73e48,
title = "A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor grown by LP-MOCVD",
abstract = "A lattice-matched In0.53Al0.22Ga0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm2, along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿Ev= 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.",
author = "Wu, {Y. H.} and Su, {J. S.} and Wei-Chou Hsu and Wen-Chau Liu and W. Lin",
year = "1994",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "455--458",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
}