A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD

Y. H. Wu, J. S. Su, Wei-Chou Hsu, Wen-Chau Liu, W. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A lattice-matched In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm 2 , along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿E v = 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages455-458
Number of pages4
ISBN (Electronic)2863321579
Publication statusPublished - 1994 Jan 1
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: 1994 Sep 111994 Sep 15

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period94-09-1194-09-15

Fingerprint

Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Valence bands
Conduction bands
Heterojunctions
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Wu, Y. H., Su, J. S., Hsu, W-C., Liu, W-C., & Lin, W. (1994). A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 455-458). [5435758] (European Solid-State Device Research Conference). IEEE Computer Society.
Wu, Y. H. ; Su, J. S. ; Hsu, Wei-Chou ; Liu, Wen-Chau ; Lin, W. / A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD European Solid-State Device Research Conference. editor / Peter Ashburn ; Chris Hill. IEEE Computer Society, 1994. pp. 455-458 (European Solid-State Device Research Conference).
@inproceedings{04ec4f56cce745a38f2586866ba73e48,
title = "A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD",
abstract = "A lattice-matched In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm 2 , along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿E v = 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.",
author = "Wu, {Y. H.} and Su, {J. S.} and Wei-Chou Hsu and Wen-Chau Liu and W. Lin",
year = "1994",
month = "1",
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "455--458",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",

}

Wu, YH, Su, JS, Hsu, W-C, Liu, W-C & Lin, W 1994, A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD in P Ashburn & C Hill (eds), European Solid-State Device Research Conference., 5435758, European Solid-State Device Research Conference, IEEE Computer Society, pp. 455-458, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 94-09-11.

A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD . / Wu, Y. H.; Su, J. S.; Hsu, Wei-Chou; Liu, Wen-Chau; Lin, W.

European Solid-State Device Research Conference. ed. / Peter Ashburn; Chris Hill. IEEE Computer Society, 1994. p. 455-458 5435758 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD

AU - Wu, Y. H.

AU - Su, J. S.

AU - Hsu, Wei-Chou

AU - Liu, Wen-Chau

AU - Lin, W.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - A lattice-matched In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm 2 , along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿E v = 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.

AB - A lattice-matched In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor has been fabricated successfully by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. This structure reveals a current gain of 85 at a collector density of 145 A/cm 2 , along with an offset voltage as low as 50 mV. No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Me¿nwhile, the larger valence band discontinuity (¿E v = 460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement.

UR - http://www.scopus.com/inward/record.url?scp=84907701316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907701316&partnerID=8YFLogxK

M3 - Conference contribution

T3 - European Solid-State Device Research Conference

SP - 455

EP - 458

BT - European Solid-State Device Research Conference

A2 - Ashburn, Peter

A2 - Hill, Chris

PB - IEEE Computer Society

ER -

Wu YH, Su JS, Hsu W-C, Liu W-C, Lin W. A new In 0.53 Al 0.22 Ga 0.25 As/InP heterojunction bipolar transistor grown by LP-MOCVD In Ashburn P, Hill C, editors, European Solid-State Device Research Conference. IEEE Computer Society. 1994. p. 455-458. 5435758. (European Solid-State Device Research Conference).