A new InGaP-GaAs double delta-doped heterojunction bipolar transistor (D3HBT)

Wen Chau Liu, Shiou Ying Cheng, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The double delta-doped heterojunction bipolar transistor (D3HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped layers at the emitter-base (E-B) and base-collector (B-C) heterojunction. Due to the use of delta-doped layers, the potential spikes at the E-B and BC heterojunctions are suppressed substantially. Thus a higher emitter injection efficiency (current gain) and a lower knee voltage are obtained. From the experimental results, it is shown that the studied D3HBT device is a good candidate for high-speed and high-power circuit applications.

Original languageEnglish
Title of host publicationICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings
EditorsFu-Jiang Liao
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages100-103
Number of pages4
ISBN (Electronic)0780343085, 9780780343085
DOIs
Publication statusPublished - 1998 Jan 1
Event1998 International Conference on Microwave and Millimeter Wave Technology, ICMMT 1998 - Beijing, China
Duration: 1998 Aug 181998 Aug 20

Publication series

NameICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings
Volume1998-August

Other

Other1998 International Conference on Microwave and Millimeter Wave Technology, ICMMT 1998
CountryChina
CityBeijing
Period98-08-1898-08-20

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Computer Networks and Communications

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