@inproceedings{b369b3b8923c4d7db4f09028121d9ef9,
title = "A new InGaP-GaAs double delta-doped heterojunction bipolar transistor (D3HBT)",
abstract = "The double delta-doped heterojunction bipolar transistor (D3HBT) is successfully fabricated with improved current-voltage characteristics by employing the insertion of delta-doped layers at the emitter-base (E-B) and base-collector (B-C) heterojunction. Due to the use of delta-doped layers, the potential spikes at the E-B and BC heterojunctions are suppressed substantially. Thus a higher emitter injection efficiency (current gain) and a lower knee voltage are obtained. From the experimental results, it is shown that the studied D3HBT device is a good candidate for high-speed and high-power circuit applications.",
author = "Liu, {Wen Chau} and Cheng, {Shiou Ying} and Chang, {Wen Lung} and Pan, {Hsi Jen} and Shie, {Yung Hsin}",
note = "Funding Information: Acknowledgment- This study was supported by the National Science Council of the Republic of China under Contract No. NSC.87-2215-E-006-070.; 1998 International Conference on Microwave and Millimeter Wave Technology, ICMMT 1998 ; Conference date: 18-08-1998 Through 20-08-1998",
year = "1998",
doi = "10.1109/ICMMT.1998.768236",
language = "English",
series = "ICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "100--103",
editor = "Fu-Jiang Liao",
booktitle = "ICMMT 1998 - 1998 International Conference on Microwave and Millimeter Wave Technology, Proceedings",
address = "United States",
}