@inproceedings{9e1d5c13bf85480d9e78e4ff3d920e28,
title = "A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)",
abstract = "A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.",
author = "Wen-Chau Liu and Cheng, {S. Y.} and Chang, {W. L.} and Pan, {H. J.} and Shie, {Y. H.}",
year = "1998",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "532--535",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}