A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chau Liu, S. Y. Cheng, W. L. Chang, H. J. Pan, Y. H. Shie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages532-535
Number of pages4
ISBN (Electronic)2863322346
Publication statusPublished - 1998 Jan 1
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 1998 Sep 81998 Sep 10

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other28th European Solid-State Device Research Conference, ESSDERC 1998
CountryFrance
CityBordeaux
Period98-09-0898-09-10

Fingerprint

Resonant tunneling
Bipolar transistors
Valence bands
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Liu, W-C., Cheng, S. Y., Chang, W. L., Pan, H. J., & Shie, Y. H. (1998). A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 532-535). [1503606] (European Solid-State Device Research Conference). IEEE Computer Society.
Liu, Wen-Chau ; Cheng, S. Y. ; Chang, W. L. ; Pan, H. J. ; Shie, Y. H. / A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. editor / A. Touboul ; Y. Danto ; H. Grunbacher. IEEE Computer Society, 1998. pp. 532-535 (European Solid-State Device Research Conference).
@inproceedings{9e1d5c13bf85480d9e78e4ff3d920e28,
title = "A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)",
abstract = "A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.",
author = "Wen-Chau Liu and Cheng, {S. Y.} and Chang, {W. L.} and Pan, {H. J.} and Shie, {Y. H.}",
year = "1998",
month = "1",
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "532--535",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",

}

Liu, W-C, Cheng, SY, Chang, WL, Pan, HJ & Shie, YH 1998, A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). in A Touboul, Y Danto & H Grunbacher (eds), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference., 1503606, European Solid-State Device Research Conference, IEEE Computer Society, pp. 532-535, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, France, 98-09-08.

A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). / Liu, Wen-Chau; Cheng, S. Y.; Chang, W. L.; Pan, H. J.; Shie, Y. H.

ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. p. 532-535 1503606 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

AU - Liu, Wen-Chau

AU - Cheng, S. Y.

AU - Chang, W. L.

AU - Pan, H. J.

AU - Shie, Y. H.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.

AB - A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (β max ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=84908178976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908178976&partnerID=8YFLogxK

M3 - Conference contribution

T3 - European Solid-State Device Research Conference

SP - 532

EP - 535

BT - ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference

A2 - Touboul, A.

A2 - Danto, Y.

A2 - Grunbacher, H.

PB - IEEE Computer Society

ER -

Liu W-C, Cheng SY, Chang WL, Pan HJ, Shie YH. A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). In Touboul A, Danto Y, Grunbacher H, editors, ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. IEEE Computer Society. 1998. p. 532-535. 1503606. (European Solid-State Device Research Conference).