A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT)

Wen-Chau Liu, S. Y. Cheng, W. L. Chang, H. J. Pan, Y. H. Shie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new InGaPIGaAs superlattice-emitter resonant tunneling bipolar transistor (BERTBT) has been fabricated and demonstrated. A 5-period InGaPIGaAs superlattice is used to serve the RTroute and the confinement barrier for minority carriers. Due to the large valence band discontinuity (L1Ev) at the InGaPIGaAs heterointerface, a high current gain (βmax ≈220) is obtained. Furthermore, the interesting N-shaped negative-difforentialresistance (NDR) phenomena resultingfrom RT effect are found both in the saturation and forward-active region of currentvoltage characteristics at room temperature.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages532-535
Number of pages4
ISBN (Electronic)2863322346
Publication statusPublished - 1998 Jan 1
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: 1998 Sep 81998 Sep 10

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other28th European Solid-State Device Research Conference, ESSDERC 1998
CountryFrance
CityBordeaux
Period98-09-0898-09-10

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Liu, W-C., Cheng, S. Y., Chang, W. L., Pan, H. J., & Shie, Y. H. (1998). A new InGaP/GaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT). In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 532-535). [1503606] (European Solid-State Device Research Conference). IEEE Computer Society.