A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, W. Lin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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