Abstract
A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.
Original language | English |
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Number of pages | 1 |
Journal | Applied Physics Letters |
DOIs | |
Publication status | Published - 1995 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)