A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base

Y. H. Wu; J. S. Su; W. C. Hsu; W. C. Liu; W. Lin

doi:10.1063/1.114208

A new InP-based heterojunction bipolar transistor utilizing an In_0.53Al_0.22Ga_0.25As base

Y. H. Wu, J. S. Su, W. C. Hsu, W. C. Liu, W. Lin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A lattice-matched In_0.53Al_0.22Ga_0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔE_V=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.

Original language	English
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.114208
Publication status	Published - 1995

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.114208

Fingerprint Dive into the research topics of 'A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base'. Together they form a unique fingerprint.

Cite this

@article{b92a345353544d28895ff55850b6e087,

title = "A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base",

abstract = "A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.",

author = "Wu, {Y. H.} and Su, {J. S.} and Hsu, {W. C.} and Liu, {W. C.} and W. Lin",

year = "1995",

doi = "10.1063/1.114208",

language = "English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base

AU - Wu, Y. H.

AU - Su, J. S.

AU - Hsu, W. C.

AU - Liu, W. C.

AU - Lin, W.

PY - 1995

Y1 - 1995

N2 - A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.

AB - A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.

UR - http://www.scopus.com/inward/record.url?scp=36449008688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449008688&partnerID=8YFLogxK

U2 - 10.1063/1.114208

DO - 10.1063/1.114208

M3 - Article

AN - SCOPUS:36449008688

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -