A new InP-InGaAs HBT with a superlattice-collector structure

Jing Yuh Chen, Der Feng Guo, Shiou Ying Cheng, Kuan Ming Lee, Chun Yuan Chen, Hung Ming Chuang, Ssu Yi Fu, Wen-Chau Liu

Research output: Contribution to journalLetter

10 Citations (Scopus)

Abstract

The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

Original languageEnglish
Pages (from-to)244-246
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number5
DOIs
Publication statusPublished - 2004 May 1

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Heterojunction bipolar transistors
Electric potential
Valence bands
Electric breakdown

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, J. Y., Guo, D. F., Cheng, S. Y., Lee, K. M., Chen, C. Y., Chuang, H. M., ... Liu, W-C. (2004). A new InP-InGaAs HBT with a superlattice-collector structure. IEEE Electron Device Letters, 25(5), 244-246. https://doi.org/10.1109/LED.2004.826978
Chen, Jing Yuh ; Guo, Der Feng ; Cheng, Shiou Ying ; Lee, Kuan Ming ; Chen, Chun Yuan ; Chuang, Hung Ming ; Fu, Ssu Yi ; Liu, Wen-Chau. / A new InP-InGaAs HBT with a superlattice-collector structure. In: IEEE Electron Device Letters. 2004 ; Vol. 25, No. 5. pp. 244-246.
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Chen, JY, Guo, DF, Cheng, SY, Lee, KM, Chen, CY, Chuang, HM, Fu, SY & Liu, W-C 2004, 'A new InP-InGaAs HBT with a superlattice-collector structure', IEEE Electron Device Letters, vol. 25, no. 5, pp. 244-246. https://doi.org/10.1109/LED.2004.826978

A new InP-InGaAs HBT with a superlattice-collector structure. / Chen, Jing Yuh; Guo, Der Feng; Cheng, Shiou Ying; Lee, Kuan Ming; Chen, Chun Yuan; Chuang, Hung Ming; Fu, Ssu Yi; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 25, No. 5, 01.05.2004, p. 244-246.

Research output: Contribution to journalLetter

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AU - Chen, Jing Yuh

AU - Guo, Der Feng

AU - Cheng, Shiou Ying

AU - Lee, Kuan Ming

AU - Chen, Chun Yuan

AU - Chuang, Hung Ming

AU - Fu, Ssu Yi

AU - Liu, Wen-Chau

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N2 - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

AB - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

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Chen JY, Guo DF, Cheng SY, Lee KM, Chen CY, Chuang HM et al. A new InP-InGaAs HBT with a superlattice-collector structure. IEEE Electron Device Letters. 2004 May 1;25(5):244-246. https://doi.org/10.1109/LED.2004.826978