A new InP-InGaAs HBT with a superlattice-collector structure

Jing Yuh Chen; Der Feng Guo; Shiou Ying Cheng; Kuan Ming Lee; Chun Yuan Chen; Hung Ming Chuang; Ssu Yi Fu; Wen Chau Liu

doi:10.1109/LED.2004.826978

A new InP-InGaAs HBT with a superlattice-collector structure

Jing Yuh Chen, Der Feng Guo, Shiou Ying Cheng, Kuan Ming Lee, Chun Yuan Chen, Hung Ming Chuang, Ssu Yi Fu, Wen Chau Liu

Research output: Contribution to journal › Letter

10 Citations (Scopus)

Abstract

The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage V_CE less than the C-E breakdown voltage BV_CEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage V_BE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

Original language	English
Pages (from-to)	244-246
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	5
DOIs	https://doi.org/10.1109/LED.2004.826978
Publication status	Published - 2004 May 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Chen, J. Y., Guo, D. F., Cheng, S. Y., Lee, K. M., Chen, C. Y., Chuang, H. M., Fu, S. Y., & Liu, W. C. (2004). A new InP-InGaAs HBT with a superlattice-collector structure. IEEE Electron Device Letters, 25(5), 244-246. https://doi.org/10.1109/LED.2004.826978

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title = "A new InP-InGaAs HBT with a superlattice-collector structure",

abstract = "The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.",

author = "Chen, {Jing Yuh} and Guo, {Der Feng} and Cheng, {Shiou Ying} and Lee, {Kuan Ming} and Chen, {Chun Yuan} and Chuang, {Hung Ming} and Fu, {Ssu Yi} and Liu, {Wen Chau}",

year = "2004",

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doi = "10.1109/LED.2004.826978",

language = "English",

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T1 - A new InP-InGaAs HBT with a superlattice-collector structure

AU - Chen, Jing Yuh

AU - Guo, Der Feng

AU - Cheng, Shiou Ying

AU - Lee, Kuan Ming

AU - Chen, Chun Yuan

AU - Chuang, Hung Ming

AU - Fu, Ssu Yi

AU - Liu, Wen Chau

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

AB - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

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DO - 10.1109/LED.2004.826978

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EP - 246

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

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