Abstract
The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.
| Original language | English |
|---|---|
| Pages (from-to) | 244-246 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 25 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2004 May 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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A new InP-InGaAs HBT with a superlattice-collector structure. / Chen, Jing Yuh; Guo, Der Feng; Cheng, Shiou Ying; Lee, Kuan Ming; Chen, Chun Yuan; Chuang, Hung Ming; Fu, Ssu Yi; Liu, Wen-Chau.
In: IEEE Electron Device Letters, Vol. 25, No. 5, 01.05.2004, p. 244-246.Research output: Contribution to journal › Letter
TY - JOUR
T1 - A new InP-InGaAs HBT with a superlattice-collector structure
AU - Chen, Jing Yuh
AU - Guo, Der Feng
AU - Cheng, Shiou Ying
AU - Lee, Kuan Ming
AU - Chen, Chun Yuan
AU - Chuang, Hung Ming
AU - Fu, Ssu Yi
AU - Liu, Wen-Chau
PY - 2004/5/1
Y1 - 2004/5/1
N2 - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.
AB - The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.
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U2 - 10.1109/LED.2004.826978
DO - 10.1109/LED.2004.826978
M3 - Letter
AN - SCOPUS:2442514329
VL - 25
SP - 244
EP - 246
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 5
ER -