A new InP-InGaAs HBT with a superlattice-collector structure

Jing Yuh Chen, Der Feng Guo, Shiou Ying Cheng, Kuan Ming Lee, Chun Yuan Chen, Hung Ming Chuang, Ssu Yi Fu, Wen Chau Liu

Research output: Contribution to journalLetter

10 Citations (Scopus)

Abstract

The dc characteristics of an interesting InP-InGaAs heterojunction bipolar transistor (HBT) with a superlattice (SL) structure incorporated in the base-collector (B-C) junction are demonstrated. In the SL structure, holes injected from the collector collide with holes confined in the SL and impact them out of the SL across the valence-band discontinuities. With a collector-emitter (C-E) voltage VCE less than the C-E breakdown voltage BVCEO, the current gain can be increased at base-current inputs because the released holes from the SL inject into the base to cause the emitter-base junction operating under more forward-biased condition. An ac current gain up to 204 is obtained. At base-emitter voltage VBE inputs, the released holes travel to the base terminal to decrease the base current. The studied HBT exhibits common-emitter current gains exceeding 47 at low current levels and useful gains spreading over seven orders of magnitude of collector current.

Original languageEnglish
Pages (from-to)244-246
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number5
DOIs
Publication statusPublished - 2004 May 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A new InP-InGaAs HBT with a superlattice-collector structure'. Together they form a unique fingerprint.

  • Cite this

    Chen, J. Y., Guo, D. F., Cheng, S. Y., Lee, K. M., Chen, C. Y., Chuang, H. M., Fu, S. Y., & Liu, W. C. (2004). A new InP-InGaAs HBT with a superlattice-collector structure. IEEE Electron Device Letters, 25(5), 244-246. https://doi.org/10.1109/LED.2004.826978