A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

Tzu Pin Chen, Shiou Ying Cheng, Ching Wen Hung, Kuei Yi Chu, Li Yang Chen, Tsung Han Tsai, Wen-Chau Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (IC = 10-12 A to IC = 10-1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency fT = 72.7 GHz and the maximum oscillation frequency fmax = 50 GHz are achieved for a nonoptimized device (AE = 6 × 6 μm2).

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

Fingerprint

Heterojunction bipolar transistors
Cutoff frequency
Electric breakdown
Heterojunctions
Microwaves
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Chen, Tzu Pin ; Cheng, Shiou Ying ; Hung, Ching Wen ; Chu, Kuei Yi ; Chen, Li Yang ; Tsai, Tsung Han ; Liu, Wen-Chau. / A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 1. pp. 11-14.
@article{b521f69b5c294d518c2023a451e9c84a,
title = "A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure",
abstract = "An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (IC = 10-12 A to IC = 10-1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency fT = 72.7 GHz and the maximum oscillation frequency fmax = 50 GHz are achieved for a nonoptimized device (AE = 6 × 6 μm2).",
author = "Chen, {Tzu Pin} and Cheng, {Shiou Ying} and Hung, {Ching Wen} and Chu, {Kuei Yi} and Chen, {Li Yang} and Tsai, {Tsung Han} and Wen-Chau Liu",
year = "2008",
month = "1",
day = "1",
doi = "10.1109/LED.2007.911286",
language = "English",
volume = "29",
pages = "11--14",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure. / Chen, Tzu Pin; Cheng, Shiou Ying; Hung, Ching Wen; Chu, Kuei Yi; Chen, Li Yang; Tsai, Tsung Han; Liu, Wen-Chau.

In: IEEE Electron Device Letters, Vol. 29, No. 1, 01.01.2008, p. 11-14.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

AU - Chen, Tzu Pin

AU - Cheng, Shiou Ying

AU - Hung, Ching Wen

AU - Chu, Kuei Yi

AU - Chen, Li Yang

AU - Tsai, Tsung Han

AU - Liu, Wen-Chau

PY - 2008/1/1

Y1 - 2008/1/1

N2 - An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (IC = 10-12 A to IC = 10-1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency fT = 72.7 GHz and the maximum oscillation frequency fmax = 50 GHz are achieved for a nonoptimized device (AE = 6 × 6 μm2).

AB - An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (IC = 10-12 A to IC = 10-1 A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency fT = 72.7 GHz and the maximum oscillation frequency fmax = 50 GHz are achieved for a nonoptimized device (AE = 6 × 6 μm2).

UR - http://www.scopus.com/inward/record.url?scp=37549008700&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37549008700&partnerID=8YFLogxK

U2 - 10.1109/LED.2007.911286

DO - 10.1109/LED.2007.911286

M3 - Article

VL - 29

SP - 11

EP - 14

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -