A New Method to Electrically Determine Effective MOSFET Channel Width

Ying Ren Ma; Kang L. Wang

doi:10.1109/T-ED.1982.21036

A New Method to Electrically Determine Effective MOSFET Channel Width

Ying Ren Ma, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

A new, easy, and accurate electrical measurement method for determining process bias of MOSFET channel width is proposed. This method is based on the linear relationship between the effective width and the channel conductance (or drain current) of a MOSFET operating in the linear region. Constant and sufficiently high gate voltages compared with the threshold voltage of the device are used in the measurement to minimize the error due to the threshold-voltage variation with W in narrow-width devices. The validity of the method is supported by identical results obtained using different gate voltages.

Original language	English
Pages (from-to)	1825-1827
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	29
Issue number	12
DOIs	https://doi.org/10.1109/T-ED.1982.21036
Publication status	Published - 1982 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/T-ED.1982.21036

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@article{eb88dde154ca46edae429f0f73764682,

title = "A New Method to Electrically Determine Effective MOSFET Channel Width",

abstract = "A new, easy, and accurate electrical measurement method for determining process bias of MOSFET channel width is proposed. This method is based on the linear relationship between the effective width and the channel conductance (or drain current) of a MOSFET operating in the linear region. Constant and sufficiently high gate voltages compared with the threshold voltage of the device are used in the measurement to minimize the error due to the threshold-voltage variation with W in narrow-width devices. The validity of the method is supported by identical results obtained using different gate voltages.",

author = "Ma, {Ying Ren} and Wang, {Kang L.}",

year = "1982",

month = dec,

doi = "10.1109/T-ED.1982.21036",

language = "English",

volume = "29",

pages = "1825--1827",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - A New Method to Electrically Determine Effective MOSFET Channel Width

AU - Ma, Ying Ren

AU - Wang, Kang L.

PY - 1982/12

Y1 - 1982/12

N2 - A new, easy, and accurate electrical measurement method for determining process bias of MOSFET channel width is proposed. This method is based on the linear relationship between the effective width and the channel conductance (or drain current) of a MOSFET operating in the linear region. Constant and sufficiently high gate voltages compared with the threshold voltage of the device are used in the measurement to minimize the error due to the threshold-voltage variation with W in narrow-width devices. The validity of the method is supported by identical results obtained using different gate voltages.

AB - A new, easy, and accurate electrical measurement method for determining process bias of MOSFET channel width is proposed. This method is based on the linear relationship between the effective width and the channel conductance (or drain current) of a MOSFET operating in the linear region. Constant and sufficiently high gate voltages compared with the threshold voltage of the device are used in the measurement to minimize the error due to the threshold-voltage variation with W in narrow-width devices. The validity of the method is supported by identical results obtained using different gate voltages.

UR - http://www.scopus.com/inward/record.url?scp=0020269014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020269014&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1982.21036

DO - 10.1109/T-ED.1982.21036

M3 - Article

AN - SCOPUS:0020269014

SN - 0018-9383

VL - 29

SP - 1825

EP - 1827

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

ER -

A New Method to Electrically Determine Effective MOSFET Channel Width

Abstract

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