A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs

J. F. Chen, C. P. Tsao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hot-carrier induced drain current degradation in 0.18 μm nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.

Original languageEnglish
Title of host publicationProceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
EditorsWai Kin Chim, John Thong, Wilson Tan, Kheng Chooi Lee
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages31-34
Number of pages4
ISBN (Electronic)0780374169
DOIs
Publication statusPublished - 2002 Jan 1
Event9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002 - Singapore, Singapore
Duration: 2002 Jul 12 → …

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2002-January

Other

Other9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2002
CountrySingapore
CitySingapore
Period02-07-12 → …

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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