TY - JOUR
T1 - A new Pd-InP Schottky hydrogen sensor fabricated by electrophoretic deposition with Pd nanoparticles
AU - Chou, Yen I.
AU - Chen, Chia Ming
AU - Liu, Wen Chau
AU - Chen, Huey Ing
N1 - Funding Information:
The authors would like to thank the National Science Council of China for their support.
Funding Information:
Manuscript received September 13, 2004; revised November 11, 2004. This work was supported by the National Science Council of Taiwan, R.O.C., under Contract NSC93-2214-E006-004. The review of this letter was arranged by Editor J. Sin.
PY - 2005/2
Y1 - 2005/2
N2 - In this letter, a new Pd-InP Schottky diode hydrogen sensor fabricated by electrophoretic deposition (EPD) combined with nanosized Pd particles is first proposed and demonstrated. Experimentally, the studied device exhibited excellent current-voltage rectifying characteristics with a large Schottky barrier height (SBH) of 829 meV. At 303 K, a high saturation sensitivity ratio of 38 was found under a very low hydrogen concentration of 15 ppm H2/air. As raising the hydrogen concentration to 1.0% H2/air, the SBH lowering of the studied device reached to 307 meV and the sensitivity ratio was high as 1.29 × 105 with a very rapid response, which far prevailed over those fabricated by the conventional thermal evaporation and electroless plating techniques. Consequentially, the EPD Pd-InP Schottky diode with extremely effective Pd gate is promising for the fabrication of high-performance hydrogen sensors.
AB - In this letter, a new Pd-InP Schottky diode hydrogen sensor fabricated by electrophoretic deposition (EPD) combined with nanosized Pd particles is first proposed and demonstrated. Experimentally, the studied device exhibited excellent current-voltage rectifying characteristics with a large Schottky barrier height (SBH) of 829 meV. At 303 K, a high saturation sensitivity ratio of 38 was found under a very low hydrogen concentration of 15 ppm H2/air. As raising the hydrogen concentration to 1.0% H2/air, the SBH lowering of the studied device reached to 307 meV and the sensitivity ratio was high as 1.29 × 105 with a very rapid response, which far prevailed over those fabricated by the conventional thermal evaporation and electroless plating techniques. Consequentially, the EPD Pd-InP Schottky diode with extremely effective Pd gate is promising for the fabrication of high-performance hydrogen sensors.
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U2 - 10.1109/LED.2004.840736
DO - 10.1109/LED.2004.840736
M3 - Article
AN - SCOPUS:13444280434
SN - 0741-3106
VL - 26
SP - 62
EP - 65
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 2
ER -