A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor

Chun Tsen Lu, Kun Wei Lin, Huey-Ing Chen, Hung Ming Chuang, Chun Yuan Chen, Wen-Chau Liu

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

A new and interesting Pd-oxide-Al0.3Ga0.7 As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H2/air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95 °C, both the forward and reverse currents are substantially, increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H2/air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.

Original languageEnglish
Pages (from-to)390-392
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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