A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor

Chun Tsen Lu; Kun Wei Lin; Huey-Ing Chen; Hung Ming Chuang; Chun Yuan Chen; Wen-Chau Liu

doi:10.1109/LED.2003.813354

A new Pd-oxide-Al_0.3Ga_0.7As MOS hydrogen sensor

Chun Tsen Lu, Kun Wei Lin, Huey-Ing Chen, Hung Ming Chuang, Chun Yuan Chen, Wen-Chau Liu

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

A new and interesting Pd-oxide-Al_0.3Ga_0.7 As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H₂/air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95 °C, both the forward and reverse currents are substantially, increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H₂/air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.

Original language	English
Pages (from-to)	390-392
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	6
DOIs	https://doi.org/10.1109/LED.2003.813354
Publication status	Published - 2003 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor",

abstract = "A new and interesting Pd-oxide-Al0.3Ga0.7 As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H2/air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95 °C, both the forward and reverse currents are substantially, increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H2/air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.",

author = "Lu, {Chun Tsen} and Lin, {Kun Wei} and Huey-Ing Chen and Chuang, {Hung Ming} and Chen, {Chun Yuan} and Wen-Chau Liu",

year = "2003",

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doi = "10.1109/LED.2003.813354",

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T1 - A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor

AU - Lu, Chun Tsen

AU - Lin, Kun Wei

AU - Chen, Huey-Ing

AU - Chuang, Hung Ming

AU - Chen, Chun Yuan

AU - Liu, Wen-Chau

PY - 2003/6/1

Y1 - 2003/6/1

N2 - A new and interesting Pd-oxide-Al0.3Ga0.7 As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H2/air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95 °C, both the forward and reverse currents are substantially, increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H2/air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.

AB - A new and interesting Pd-oxide-Al0.3Ga0.7 As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H2/air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95 °C, both the forward and reverse currents are substantially, increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H2/air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.

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