A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor

Yan-Ying-Tsai, Shiou Ying Cheng, Jung Hui Tsai, Der Feng Guo, Huey-Ing Chen, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30∼250°C.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages2047-2050
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 2007 Jun 102007 Jun 14

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period07-06-1007-06-14

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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