A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor

Yan-Ying-Tsai, Shiou Ying Cheng, Jung Hui Tsai, Der Feng Guo, Huey-Ing Chen, Wen-Chau Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30∼250°C.

Original languageEnglish
Title of host publicationTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages2047-2050
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Event4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
Duration: 2007 Jun 102007 Jun 14

Publication series

NameTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period07-06-1007-06-14

Fingerprint

Diodes
Hydrogen
Oxides
Sensors
Air
Temperature
Metals

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Yan-Ying-Tsai, Cheng, S. Y., Tsai, J. H., Guo, D. F., Chen, H-I., & Liu, W-C. (2007). A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor. In TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems (pp. 2047-2050). [4300566] (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2007.4300566
Yan-Ying-Tsai ; Cheng, Shiou Ying ; Tsai, Jung Hui ; Guo, Der Feng ; Chen, Huey-Ing ; Liu, Wen-Chau. / A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor. TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. pp. 2047-2050 (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems).
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title = "A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor",
abstract = "A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8{\%} (107.4{\%}) to 943.1{\%} (1337.3{\%}), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30∼250°C.",
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Yan-Ying-Tsai, Cheng, SY, Tsai, JH, Guo, DF, Chen, H-I & Liu, W-C 2007, A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor. in TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems., 4300566, TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems, pp. 2047-2050, 4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07, Lyon, France, 07-06-10. https://doi.org/10.1109/SENSOR.2007.4300566

A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor. / Yan-Ying-Tsai; Cheng, Shiou Ying; Tsai, Jung Hui; Guo, Der Feng; Chen, Huey-Ing; Liu, Wen-Chau.

TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. p. 2047-2050 4300566 (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30∼250°C.

AB - A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107.4%) to 943.1% (1337.3%), under the forward (reverse) bias of 0.3V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H2/air. In addition, it is worth to note that even an extremely low hydrogen concentration of 4.3 ppm H2/air can be effectively detected at the temperature of 30∼250°C.

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Yan-Ying-Tsai, Cheng SY, Tsai JH, Guo DF, Chen H-I, Liu W-C. A new Pt-oxide-InAlP-based Schottky diode hydrogen sensor. In TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems. 2007. p. 2047-2050. 4300566. (TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems). https://doi.org/10.1109/SENSOR.2007.4300566