A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

Wen-Chau Liu, Kun Wei Lin, Huey-Ing Chen, Chih Kai Wang, Chin Chuan Cheng, Shiou Ying Cheng, Chun Tsen Lu

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

Original languageEnglish
Pages (from-to)640-642
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number11
DOIs
Publication statusPublished - 2002 Nov 1

Fingerprint

Oxides
Hydrogen
Diodes
Metals
Sensors
Transient analysis
Air
Temperature
Desorption
Gases
Oxide semiconductors
Adsorption
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, Wen-Chau ; Lin, Kun Wei ; Chen, Huey-Ing ; Wang, Chih Kai ; Cheng, Chin Chuan ; Cheng, Shiou Ying ; Lu, Chun Tsen. / A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor. In: IEEE Electron Device Letters. 2002 ; Vol. 23, No. 11. pp. 640-642.
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abstract = "A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561{\%} is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.",
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A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor. / Liu, Wen-Chau; Lin, Kun Wei; Chen, Huey-Ing; Wang, Chih Kai; Cheng, Chin Chuan; Cheng, Shiou Ying; Lu, Chun Tsen.

In: IEEE Electron Device Letters, Vol. 23, No. 11, 01.11.2002, p. 640-642.

Research output: Contribution to journalArticle

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