A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

Wen Chau Liu, Kun Wei Lin, Huey Ing Chen, Chih Kai Wang, Chin Chuan Cheng, Shiou Ying Cheng, Chun Tsen Lu

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35 Citations (Scopus)


A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

Original languageEnglish
Pages (from-to)640-642
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 2002 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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