A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

Wen Chau Liu; Kun Wei Lin; Huey Ing Chen; Chih Kai Wang; Chin Chuan Cheng; Shiou Ying Cheng; Chun Tsen Lu

doi:10.1109/LED.2002.805006

A new Pt/oxide/In_0.49Ga_0.51P MOS Schottky diode hydrogen sensor

Wen Chau Liu, Kun Wei Lin, Huey Ing Chen, Chih Kai Wang, Chin Chuan Cheng, Shiou Ying Cheng, Chun Tsen Lu

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

A new and interesting Pt/oxide/In_0.49 Ga_0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H₂/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H₂/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

Original language	English
Pages (from-to)	640-642
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	23
Issue number	11
DOIs	https://doi.org/10.1109/LED.2002.805006
Publication status	Published - 2002 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2002.805006

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title = "A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor",

abstract = "A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.",

author = "Liu, {Wen Chau} and Lin, {Kun Wei} and Chen, {Huey Ing} and Wang, {Chih Kai} and Cheng, {Chin Chuan} and Cheng, {Shiou Ying} and Lu, {Chun Tsen}",

note = "Funding Information: Manuscript received June 18, 2002; revised August 13, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E-006-021. The review of this letter was arranged by Editor D. Ueda.",

year = "2002",

month = nov,

doi = "10.1109/LED.2002.805006",

language = "English",

volume = "23",

pages = "640--642",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

AU - Liu, Wen Chau

AU - Lin, Kun Wei

AU - Chen, Huey Ing

AU - Wang, Chih Kai

AU - Cheng, Chin Chuan

AU - Cheng, Shiou Ying

AU - Lu, Chun Tsen

N1 - Funding Information: Manuscript received June 18, 2002; revised August 13, 2002. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC 90-2215-E-006-021. The review of this letter was arranged by Editor D. Ueda.

PY - 2002/11

Y1 - 2002/11

N2 - A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

AB - A new and interesting Pt/oxide/In0.49 Ga0.51 P metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations and at different temperatures are measured. The presence of dipoles at the oxide layer leads to an extra electrical field and the variation of Schottky barrier height. Even at room temperature, a very high hydrogen detection sensitivity- of 561% is obtained when a 9090 ppm H2/air gas is introduced. In addition, an absorption response time less than 1s under the applied voltage of 0.7 V and 9090 ppm H2/air hydrogen ambient is found. The roles of hydrogen adsorption and desorption for the transient response at different temperatures are also investigated.

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

A new Pt/oxide/In_0.49Ga_0.51P MOS Schottky diode hydrogen sensor

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