A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs

Hong Wun Gao, Yeong-Her Wang, Ying Wen Ko, Te Kuang Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.

Original languageEnglish
Title of host publicationEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538629079
DOIs
Publication statusPublished - 2017 Dec 1
Event13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan
Duration: 2017 Oct 182017 Oct 20

Publication series

NameEDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume2017-January

Other

Other13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
CountryTaiwan
CityHsinchu
Period17-10-1817-10-20

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Gao, H. W., Wang, Y-H., Ko, Y. W., & Chiang, T. K. (2017). A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 1-2). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126469