A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs

Hong Wun Gao; Yeong-Her Wang; Ying Wen Ko; Te Kuang Chiang

doi:10.1109/EDSSC.2017.8126469

A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs

Hong Wun Gao, Yeong-Her Wang, Ying Wen Ko, Te Kuang Chiang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.

Original language	English
Title of host publication	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538629079
DOIs	https://doi.org/10.1109/EDSSC.2017.8126469
Publication status	Published - 2017 Dec 1
Event	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 - Hsinchu, Taiwan Duration: 2017 Oct 18 → 2017 Oct 20

Publication series

Name	EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits
Volume	2017-January

Other

Other	13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017
Country/Territory	Taiwan
City	Hsinchu
Period	17-10-18 → 17-10-20

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/EDSSC.2017.8126469

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Gao, H. W., Wang, Y.-H., Ko, Y. W., & Chiang, T. K. (2017). A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits (pp. 1-2). (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2017.8126469

Gao, Hong Wun ; Wang, Yeong-Her ; Ko, Ying Wen et al. / A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits).

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title = "A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs",

abstract = "Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.",

author = "Gao, {Hong Wun} and Yeong-Her Wang and Ko, {Ying Wen} and Chiang, {Te Kuang}",

year = "2017",

month = dec,

day = "1",

doi = "10.1109/EDSSC.2017.8126469",

language = "English",

series = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--2",

booktitle = "EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits",

address = "United States",

note = "13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017 ; Conference date: 18-10-2017 Through 20-10-2017",

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Gao, HW, Wang, Y-H, Ko, YW & Chiang, TK 2017, A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. in EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 13th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2017, Hsinchu, Taiwan, 17-10-18. https://doi.org/10.1109/EDSSC.2017.8126469

A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. / Gao, Hong Wun; Wang, Yeong-Her; Ko, Ying Wen et al.
EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-2 (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Chiang, Te Kuang

PY - 2017/12/1

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N2 - Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.

AB - Based on the parabolic potential approach (PPA) and equivalent number of gates (ENG), a new quasi-3-D subthreshold current/swing model for the fully depleted quadruple-Gate (FDQG) MOSFET is developed. The model explicitly shows how the channel length, gate oxide thickness, and silicon film thickness affect the subthreshold current/swing behavior. The model is verified by its calculated results matching well with those of the three-dimensional device simulator and can be used to investigate the subthreshold current/swing for the shortchannel QG MOSFETs.

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Gao HW, Wang YH, Ko YW, Chiang TK. A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs. In EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-2. (EDSSC 2017 - 13th IEEE International Conference on Electron Devices and Solid-State Circuits). doi: 10.1109/EDSSC.2017.8126469

A new quasi-3-D subthreshold current/swing model for fully-depleted quadruple-Gate (FDQG) MOSFETs

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