A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET

Te Kuang Chiang; Ying Wen Ko; Hong Wun Gao; Yeong Her Wang

doi:10.1109/ASICON.2017.8252527

A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET

Te Kuang Chiang, Ying Wen Ko, Hong Wun Gao, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold swing roll-up ΔSS can be well controlled by the scaling theory. With its computational efficiency and simple form, the model can be easily used for the circuit application of the Elliptical GAA MOSFET.

Original language	English
Title of host publication	Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
Editors	Yajie Qin, Zhiliang Hong, Ting-Ao Tang
Publisher	IEEE Computer Society
Pages	520-524
Number of pages	5
ISBN (Electronic)	9781509066247
DOIs	https://doi.org/10.1109/ASICON.2017.8252527
Publication status	Published - 2017 Jul 1
Event	12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 - Guiyang, China Duration: 2017 Oct 25 → 2017 Oct 28

Publication series

Name	Proceedings of International Conference on ASIC
Volume	2017-October
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Other

Other	12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017
Country	China
City	Guiyang
Period	17-10-25 → 17-10-28

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All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Chiang, T. K., Ko, Y. W., Gao, H. W., & Wang, Y. H. (2017). A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. In Y. Qin, Z. Hong, & T-A. Tang (Eds.), Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017 (pp. 520-524). (Proceedings of International Conference on ASIC; Vol. 2017-October). IEEE Computer Society. https://doi.org/10.1109/ASICON.2017.8252527

Chiang, Te Kuang ; Ko, Ying Wen ; Gao, Hong Wun ; Wang, Yeong Her. / A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. editor / Yajie Qin ; Zhiliang Hong ; Ting-Ao Tang. IEEE Computer Society, 2017. pp. 520-524 (Proceedings of International Conference on ASIC).

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title = "A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET",

abstract = "On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold swing roll-up ΔSS can be well controlled by the scaling theory. With its computational efficiency and simple form, the model can be easily used for the circuit application of the Elliptical GAA MOSFET.",

author = "Chiang, {Te Kuang} and Ko, {Ying Wen} and Gao, {Hong Wun} and Wang, {Yeong Her}",

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Chiang, TK, Ko, YW, Gao, HW & Wang, YH 2017, A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. in Y Qin, Z Hong & T-A Tang (eds), Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Proceedings of International Conference on ASIC, vol. 2017-October, IEEE Computer Society, pp. 520-524, 12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017, Guiyang, China, 17-10-25. https://doi.org/10.1109/ASICON.2017.8252527

A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. / Chiang, Te Kuang; Ko, Ying Wen; Gao, Hong Wun; Wang, Yeong Her.

Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. ed. / Yajie Qin; Zhiliang Hong; Ting-Ao Tang. IEEE Computer Society, 2017. p. 520-524 (Proceedings of International Conference on ASIC; Vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold swing roll-up ΔSS can be well controlled by the scaling theory. With its computational efficiency and simple form, the model can be easily used for the circuit application of the Elliptical GAA MOSFET.

AB - On the basis of the quasi-three-dimensional scaling equation and minimum central potential, a new short-channel-effect-degraded subthreshold behavior model for Gate-All-Around (GAA) MOSFET with elliptical cross section is presented. In comparison to the counterpart of conventional FinFET, Elliptical GAA MOSFET not only provides stronger field confinement, but also enhances the immunity to SCEs due to its shorter scaling length. Besides, both threshold voltage roll-off ΔVTH and subthreshold swing roll-up ΔSS can be well controlled by the scaling theory. With its computational efficiency and simple form, the model can be easily used for the circuit application of the Elliptical GAA MOSFET.

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Chiang TK, Ko YW, Gao HW, Wang YH. A new short-channel-effect-degraded subthreshold behavior model for elliptical gate-all-around MOSFET. In Qin Y, Hong Z, Tang T-A, editors, Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. IEEE Computer Society. 2017. p. 520-524. (Proceedings of International Conference on ASIC). https://doi.org/10.1109/ASICON.2017.8252527

Access to Document

10.1109/ASICON.2017.8252527