TY - JOUR
T1 - A new silicon field-effect transistors with Two-Hole-Transport-Mode (HTM) channels grown by Molecular Beam Epitaxy (MBE)
AU - Wu, San Lein
AU - Han, Tzung Ting
AU - Wang, Yan Ping
AU - Chang, Shoou Jinn
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1998/11/1
Y1 - 1998/11/1
N2 - In this paper, the two-hole-transport-mode (HTM) channels Si Metal Semiconductor Field-Effect transistors (MESFET's) grown by molecular beam epitaxy (MBE) has been developed. This device shows two peak steps in transconductance against the applied gate voltage, which can be explained by means of the bandstructure. Extrinsic transconductances of 50 mS/mm for the MODFET-Like HTM and 37.5 mS/mm for the δ-FET-like HTM were obtained.
AB - In this paper, the two-hole-transport-mode (HTM) channels Si Metal Semiconductor Field-Effect transistors (MESFET's) grown by molecular beam epitaxy (MBE) has been developed. This device shows two peak steps in transconductance against the applied gate voltage, which can be explained by means of the bandstructure. Extrinsic transconductances of 50 mS/mm for the MODFET-Like HTM and 37.5 mS/mm for the δ-FET-like HTM were obtained.
UR - http://www.scopus.com/inward/record.url?scp=0032207197&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032207197&partnerID=8YFLogxK
U2 - 10.1143/jjap.37.l1290
DO - 10.1143/jjap.37.l1290
M3 - Article
AN - SCOPUS:0032207197
SN - 0021-4922
VL - 37
SP - L1290-L1292
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 11 PART A
ER -