TY - GEN
T1 - A Noise-shaping SAR Assisted MASH 2-1 Sigma-Delta Modulator
AU - Lin, Yu Sian
AU - Chang, Soon Jyh
AU - Wei, Chia Ling
N1 - Funding Information:
This work was supported in part by Ministry of Science and Technology in Taiwan under the grant MOST 108-2218-E-006-014. The authors would like to express their gratitude to Taiwan Semiconductor Research Institute (TSRI), for the chip fabrication and measurement support.
Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - This paper presents a noise-shaping SAR assisted MASH 2-1 sigma-delta modulator (SDM). To implement a SDM with high resolution and high speed, the resolution of the quantizer and the noise-shaping order must rise with a low oversampling ratio (OSR). Based on the proposed MASH structure, the noise-shaping order can be raised, and also the number of OPAMPs and the mismatch effect among different stages can be reduced. Furthermore, two quantizers in the proposed MASH structure are combined into a noise-shaping quantizer for easy implementation. The proof-of-concept prototype was fabricated in TSMC 90-nm CMOS technology. At 1.0V supply, sampling rate of 80-MS/s, bandwidth of 3.333 MHz, the prototype achieves 71.44 dB SNDR. Besides, the slope of it verifies the almost 3rd noise-shaping successfully.
AB - This paper presents a noise-shaping SAR assisted MASH 2-1 sigma-delta modulator (SDM). To implement a SDM with high resolution and high speed, the resolution of the quantizer and the noise-shaping order must rise with a low oversampling ratio (OSR). Based on the proposed MASH structure, the noise-shaping order can be raised, and also the number of OPAMPs and the mismatch effect among different stages can be reduced. Furthermore, two quantizers in the proposed MASH structure are combined into a noise-shaping quantizer for easy implementation. The proof-of-concept prototype was fabricated in TSMC 90-nm CMOS technology. At 1.0V supply, sampling rate of 80-MS/s, bandwidth of 3.333 MHz, the prototype achieves 71.44 dB SNDR. Besides, the slope of it verifies the almost 3rd noise-shaping successfully.
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U2 - 10.1109/VLSI-DAT49148.2020.9196468
DO - 10.1109/VLSI-DAT49148.2020.9196468
M3 - Conference contribution
AN - SCOPUS:85093665347
T3 - 2020 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2020
BT - 2020 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2020
Y2 - 10 August 2020 through 13 August 2020
ER -