A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Nai Chao Su, Shui-Jinn Wang, Albert Chin

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

Original languageEnglish
Article number5378649
Pages (from-to)201-203
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

Fingerprint

Charge trapping
Flash memory
Data storage equipment
Zinc Oxide
Gallium
Indium
Thin film transistors
Zinc oxide
Oxide films
Durability
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics. / Su, Nai Chao; Wang, Shui-Jinn; Chin, Albert.

In: IEEE Electron Device Letters, Vol. 31, No. 3, 5378649, 01.03.2010, p. 201-203.

Research output: Contribution to journalArticle

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