A three-terminal 6-doped GaAs/In0.25Ga0.75As/GaAs real-space transfer transistor (RSTT) has been implemented by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. We carried out an ohmic recess to result in shallow alloyed contacts and electrically isolated from ohmic electrodes. An undoped low-growth-rate buffer layer was inserted between the collector and barrier to suppress the dopant out-diffusion from the substrate to the barrier. The proposed device with a 5 × 100pm2 emitter channel revealed an extremely sharp charge injection, a broad valley range (> 5 V), a high peak-to-valley current ratio up to 430 000, and a high current driving capability at room temperature. These characteristics are, to our knowledge, among the highest reported values to date.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering