A Novel δ-Doped GaAs/InGaAs Real-Space Transfer Transistor with High Peak-to-Valley Ratio and High Current Driving Capability

Chang Luen Wu, Wei-Chou Hsu, Ming Shang Tsai, Hir Ming Shieh

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

A three-terminal 6-doped GaAs/In0.25Ga0.75As/GaAs real-space transfer transistor (RSTT) has been implemented by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) for the first time. We carried out an ohmic recess to result in shallow alloyed contacts and electrically isolated from ohmic electrodes. An undoped low-growth-rate buffer layer was inserted between the collector and barrier to suppress the dopant out-diffusion from the substrate to the barrier. The proposed device with a 5 × 100pm2 emitter channel revealed an extremely sharp charge injection, a broad valley range (> 5 V), a high peak-to-valley current ratio up to 430 000, and a high current driving capability at room temperature. These characteristics are, to our knowledge, among the highest reported values to date.

Original languageEnglish
Pages (from-to)112-114
Number of pages3
JournalIEEE Electron Device Letters
Volume16
Issue number3
DOIs
Publication statusPublished - 1995 Jan 1

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Low pressure chemical vapor deposition
Charge injection
Metallorganic chemical vapor deposition
Buffer layers
Transistors
Doping (additives)
Electrodes
Substrates
Temperature
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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A Novel δ-Doped GaAs/InGaAs Real-Space Transfer Transistor with High Peak-to-Valley Ratio and High Current Driving Capability. / Wu, Chang Luen; Hsu, Wei-Chou; Tsai, Ming Shang; Shieh, Hir Ming.

In: IEEE Electron Device Letters, Vol. 16, No. 3, 01.01.1995, p. 112-114.

Research output: Contribution to journalArticle

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