A novel approach for forming ductile Cu-to-Cu interconnection

Che Yu Yeh, Yi Kai Kuo, Shih Kang Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three-dimensional integrated-circuit (3D IC) is one of the most important electronic packaging technologies nowadays. Cu-to-Cu through-silicon-via interconnection is a crucial process in 3D IC. Direct Cu-to-Cu bonding has been a challenging process for the industry due to its strict requirements on processing conditions and corresponding high processing costs. Micro-bumping is a widely used method for Cu-to-Cu bonding. Cheap and fast process are its advantages, and it has been a mature process in electronic industry. However, intermetallic compounds (IMCs) usually form at solder joints, which are brittle and electrical resistant. Filler materials that help forming Cu-to-Cu joints with better reliability and lower costs are demanding. In this article, a critical review on Cu-to-Cu interconnection technology is presented and an approach for fabricating ductile Cu-to-Cu 3D IC joints is proposed.

Original languageEnglish
Title of host publication2016 International Conference on Electronics Packaging, ICEP 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages479-484
Number of pages6
ISBN (Electronic)9784904090176
DOIs
Publication statusPublished - 2016 Jun 7
Event2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan
Duration: 2016 Apr 202016 Apr 22

Publication series

Name2016 International Conference on Electronics Packaging, ICEP 2016

Other

Other2016 International Conference on Electronics Packaging, ICEP 2016
CountryJapan
CityHokkaido
Period16-04-2016-04-22

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Mechanics of Materials

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