In a surface-intrinsic-n + (SIN +) structure, the strong electric field in the intrinsic layer gives rise to level splitting (∼20 meV) between heavy-hole (HH) and light-hole (LH) bands. This causes inaccuracy in the traditional scaling Fourier analysis of photoreflectance (PR). In this work, we present a novel technique for obtaining the valence-band split from the Fourier spectrum of PR of GaAs. A linear combination of the FKO spectra of HH and LH is adopted as a trial function. Besides two linear coefficients, the band gaps for HH and LH are also treated as adjusted parameters. We develop an efficient algorithm for fitting the trial function to the PR spectrum in Fourier space. The field-induced splits are observed in PR spectra obtained under various pump beam intensities.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)