Carrier effective mass in the self-assembled GeSi quantum dots (QDs) grown by a solid-source molecular beam epitaxy (MBE) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.
|Number of pages||3|
|Publication status||Published - 2004|
|Event||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China|
Duration: 2004 Oct 18 → 2004 Oct 21
|Other||2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004|
|Period||04-10-18 → 04-10-21|
All Science Journal Classification (ASJC) codes