A novel approach to evaluate the carrier effective mass in GeSi quantum dot structure

Zheng Yang, Yi Shi, Jian Lin Liu, Bo Yan, Rong Zhang, You Dou Zheng, Kang Long Wang

Research output: Contribution to conferencePaperpeer-review

Abstract

Carrier effective mass in the self-assembled GeSi quantum dots (QDs) grown by a solid-source molecular beam epitaxy (MBE) system has been studied with temperature-dependent photoluminescence (PL) and Raman scattering measurements. The temperature-dependence of the PL was fitted by the combination of Arrhenius and Berthelot type functions, from which a novel approach to evaluate the carrier effective mass has been proposed.

Original languageEnglish
Pages913-915
Number of pages3
Publication statusPublished - 2004
Event2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, China
Duration: 2004 Oct 182004 Oct 21

Other

Other2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
CountryChina
CityBeijing
Period04-10-1804-10-21

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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